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Power Electronics Industry Update This Week - 25 August 2025

25 August 2025 Newsletter - everything PE

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Weekly Edition
Date: 25 August 2025
 
Sponsored by PCIM Asia 2025
 
 
Latest News this Week
News
Flex Power Modules Introduces 1 kW Digital DC-DC Converters

Flex Power Modules

News
iNRCORE Launches 1 kW Planar Transformers

iNRCORE

News
ROHM Launches TVS Diode for Wearables and Audio Devices

ROHM Semiconductor

News
AC-DC Converters for Low-Power ITE Applications

XP Power

News
Driving Innovation: Infineon and DPIIT Collaborate to Empower Indian Startups

Infineon Technologies

News
Würth Elektronik Releases Application Note on SEPIC Converter Design

Wurth Elektronik

News
Reach Power Joins DARPA Initiative to Advance Wireless Power

Reach Power

News
TDK Expands EPCOS InsuGate Series with 1 kV-Rated SMT Gate Drive Transformers

TDK Corporation

News
Diodes Launches 2 A Synchronous Buck Converter for Automotive Applications

Diodes Incorporated

News
PANJIT to Showcase Power Electronics Innovations at electronica India 2025

Panjit Semiconductor

News
QPT Introduces World's First AI-Ready Motor Drive for Collaborative Robots

QPT

News
MicroPower Direct Powers Innovation with Next-Gen Power Conversion Solutions

Micropower Direct

News
Microchip Unveils PoE PSE Controller for Multi-Port Power Management

Microchip Technology

News
Yank Technologies Wins NASA Contract to Develop Wireless Power Systems

Yank Technologies

Sponsored by PCIM Asia 2025
PCIM Asia 2025
PCIM Asia 2025
PCIM Asia 2025 serves as a premier international platform for experts in power electronics, drive technologies, and power quality. The event showcases the latest advancements in power electronics components and systems, ensuring attendees stay at the forefront of industry innovation. With a strong synergy between the conference and exhibition, the event guarantees high-quality engagement, fostering seamless knowledge exchange between industry and academia. Click here to learn more.
New White Papers & Articles
Designing an IEEE 802.3bt PoE System with PD77718T4, PD77718T3 and PD77714T4 - Microchip Technology
Passing CISPR25-5 with the MPQ4323M-AEC1’s Three EMC Filter Components - Monolithic Power Systems
Using Bourns TBU High-Speed Protectors as Gate/Switching Drivers - Bourns
ROHM's EcoGaN Solutions Contribute to Greater Miniaturization and Energy Savings - ROHM Semiconductor
How Battery Communication Protocols Are Driving Smarter Solar Systems
More Whitepapers
Featured Products this Week
Gate Driver
Monolithic Low-Power Gate Driver
Gate Driver  from Analog Devices

The TMC9660 from Analog Devices is a Monolithic Gate Driver IC that is ideal for robotics, power tools, gardening, automated guided vehicles, pumps, factory automation, desktop manufacturing, e-bikes, light electric vehicles, and industrial 3D printing applications. It requires an input voltage of 7.7-70 V. It is available in a surface-mount package that measures 9 x 9 mm.
Download Datasheet Product Details
EV Fuse
200 A High-Speed EV Fuse
EV Fuse  from Eaton

The EVKR30-200 from Eaton is a High-Speed Electric Vehicle Fuse. It has a voltage rating of 1000 V (DC) and a current rating of 200 A. This non-indicating EV fuse doesn't include a striker and has a breaking capacity of 25 kA. It weighs 156 g and is available in a screw-mount package that measures 110 x 31 mm. This EV fuse is ideal for hybrid and electric vehicles.
Download Datasheet Product Details
Power Capacitor
2.5 V Chip Multilayer Ceramic Capacitor
Power Capacitor  from Murata

The GRM158R60E476ME01 from Murata is a Chip Multilayer Ceramic Capacitor that is designed for general-purpose applications. It has a capacitance of 47 microfarads and a capacitance tolerance of ±20%. This RoHS/REACH-compliant capacitor has a voltage rating of 2.5 V. It is available in a surface-mount package that measures 1.0 x 0.5 x 0.8 mm and is suitable for mobile electronics.
Download Datasheet Product Details
PMIC
Automotive-Grade Low Power PMIC
PMIC  from Renesas

The RAA271084-B from Renesas is an Automotive-Qualified Power Management IC that is ideal for supplying power to Renesas’ RH850 U2x microcontroller units (MCUs), automotive power-train systems, and automotive gateway applications. It requires an input voltage of 2.7-42 V and an input current of 16 µA (power-off stand-by mode) and 25 µA (engine off-timer mode).
Download Datasheet Product Details
Featured Interview
Featured Interview
Interview with Cathal Sheehan from Bourns
everything PE recently interviewed Cathal Sheehan, Applications Director, at Bourns. Bourns is a global electronics manufacturer specializing in a wide array of high-quality electronic components, circuit protection solutions, sensors, resistive and magnetic products, as well as potentiometers and controls. Click here to learn more.
Power Switch IC
AEC-Q100 Qualified Low-Side Driver
Power Switch IC  from STMicroelectronics

The L9800 from STMicroelectronics is an Automotive-Qualified 8-Channel Low Side Driver that has been designed for automotive applications (LEDs and relays) and resistive, capacitive, and inductive loads. It requires an input voltage of 3-28 V and an output current of 330 mA (load). This driver consists of 8 N-channel power MOSFETs, a control logic, a power supply, and a communication interface.
Download Datasheet Product Details
Power Diode
600 V High-Speed SiC Schottky Diode
Power Diode  from Wolfspeed

The CSD01060E from Wolfspeed is a Silicon Carbide (SiC) Schottky Diode that is ideal for switch mode power supplies (SMPS), motor drives, and power factor correction applications. It has a forward voltage of 1.6 V and a forward current of less than 4 A. This diode has a repetitive peak reverse voltage of less than 600 V, a reverse current of 20 µA, and a non-repetitive peak forward current of up to 9 A.
Download Datasheet Product Details
MOSFET
200 V N-Channel MOSFET
MOSFET  from VBsemi Electronics

The VBGQA1202N from VBsemi Electronics is an N-Channel MOSFET. It has a drain-source breakdown voltage of over 200 V, a gate threshold voltage of up to 3 V, and a drain-source on-resistance of 18 milli-ohms. This MOSFET has a continuous drain current of up to 50 A and a power dissipation of less than 136 W. It is fabricated using SGT technology and can withstand a junction temperature of 175°C.
Download Datasheet Product Details
Power Diode
2200 V Rectifier Diode
Power Diode  from Hitachi Energy

The 5SED 0890T2250 from Hitachi Energy is a Rectifier Diode. It has a forward voltage of less than 1.1 V and a forward current of up to 889 A. This power diode has a repetitive peak reverse voltage of 2200 V and a repetitive peak reverse current of less than 30 mA. It has an insulated baseplate that uses AIN ceramic. This power diode has precision pressure contacts for high reliability.
Download Datasheet Product Details
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Power Diode
5000 W Low Clamping Voltage TVS Diodes
Power Diode  from Littelfuse

The 5.0SMDJ-FB Series from Littelfuse are Low Clamping Voltage TVS Diodes that are designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events. They have a reverse stand-off voltage of up to 64 V, a breakdown voltage of over 78.6 V and a clamping voltage of up to 91.4 V.
Download Datasheet Product Details
IGBT
650 V Automotive-Grade IGBT
IGBT  from onsemi

The AFGB30T65RQDN from onsemi is an Automotive-Grade IGBT that is designed to offer optimum performance for automotive applications. It has a collector-emitter voltage of up to 650 V, a gate threshold voltage of less than 5.3 V, and a saturated collector-emitter voltage of 1.58 V. This AEC-Q101-qualified IGBT has a collector current of 30 A and dissipates a power of less than 235.48 W.
Download Datasheet Product Details
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