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| 12 V Isolated DC-DC Converter | |
DC to DC Converter
from Delta Electronics
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| The DA01S1212A from Delta Electronics is an Isolated DC-DC Converter that converts an input voltage of 10.8-13.2 V to an output voltage of 12 V. It can deliver an output current of up to 84 mA. This DC-DC converter has an output power rating of 1 W and offers an efficiency of 79%. It is available in a dual-inline package that measures 12.7 x 10.2 x 3.5 mm. |
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| 25 W Off-line Quasi-Resonant Flyback Switcher IC | |
AC to DC Converter
from Power Integrations
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| The INN3365C-H301-TL from Power Integrations is an Off-line Quasi-Resonant Flyback Switcher IC that converts an AC input voltage of 85-265 V to a regulated DC output of 5-24 V. It provides an output power of up to 25 W at 230 V input and 22 W at universal input. This converter is available in a compact surface-mount package that measures 13.43 × 9.40 × 1.60 mm. |
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| 2.5 A Automotive-Qualified Integrated Half-Bridge IC | |
PMIC
from Infineon Technologies
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| The TLF11251EP from Infineon Technologies is an Automotive-Qualified Half Bridge with Integrated Driver and Level Shifter designed for higher temperature requirements. It requires an input voltage of 3.5-7 V. This AEC-Q100 Grade 0-qualified PMIC includes an integrated PMOS and NMOS complementary output bridge. It is available in a surface-mount package that measures 6.0 x 4.9 mm. |
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| 800 W Intermediate Bus DC-DC Converter | |
DC to DC Converter
from Flex Power Modules
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| The BMR3141011/001C from Flex Power Modules is an Intermediate Bus DC-DC Converter that converts an input voltage of 38-60 V to an output voltage of 9.5-15 V. It can deliver an output current of up to 62 A. This DC-DC converter has a rated output power of 800 W and a peak power of 1500 W. It is available in a surface-mount package that measures 28.2 x 17.8 x 9.65 mm. |
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| Automotive-Grade Gate Drive Transformers | |
Power Transformer
from TDK Corporation
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| The B78541A Series from TDK Corporation are Automotive Grade Gate Drive Transformers. These transformers have a nominal inductance of 50 µH and a leakage inductance of 0.6-0.7 µH. They have a turns ratio of 1:0.91:0.36 - 1:1.08 and operate at frequencies from 100-500 kHz. These transformers are available in a surface-mount package that measures 14.85 x 10.05 x 9.2 mm. |
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| PoE Controller for Switches and Routers | |
Power Over Ethernet IC
from Microchip Technology
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| The PD77010 from Microchip Technology is a PoE PSE Controller designed to manage multi-port Power over Ethernet (PoE) systems. This POE IC operates in conjunction with seventh-generation PoE Managers such as the PD77718T4, PD77718T3, or PD77714T4. It requires a supply voltage of 3-3.6 V. It is available in a surface-mount package that measures 5 x 5 x 1 mm. |
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| 1 A Triac for General-Purpose AC Switching | |
Triac
from STMicroelectronics
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| The Z0110MA 1AA2 from STMicroelectronics is a Standard 1 A Triac that is suitable for general-purpose AC switching applications. It has a break-over voltage of 600 V and a break-over current of less than 8.5 A. This thyristor has a gate trigger voltage of up to 1.3 V and a gate trigger current of 25 mA. It is available in a through-hole package that measures 17.1 x 4.7 mm. |
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| Automotive-Grade GaN Power IC | |
GaN Power Transistor
from Navitas Semiconductor
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| The NV6525 from Navitas Semiconductor is an Automotive-Qualified GaN Power IC that is ideal for AC/DC, DC-DC, CCM/CrM topologies, data center CRPS, on-board chargers, solar inverters, and motor drive applications. This transistor has a drain-source voltage of over 650 V. It is available in a thermally-enhanced top-cooled surface-mount package that measures 15.20 x 10.10 mm. |
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| 1200 V AQG-324-Qualified SiC MOSFET | |
MOSFET
from Wolfspeed
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| The ECB2R1M12YM3L from Wolfspeed is a Silicon Carbide MOSFET. It has a drain-source voltage of 1200 V, a gate threshold voltage of 2.5 V, and a drain-source on-resistance of less than 2.8 milli-ohms. This SiC MOSFET has a continuous drain current of 700 A and dissipates an output power of 1852 W. It is available as a six-pack module that measures 154.5 x 142.5 x 12.35 mm. |
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| 810 µH Through-Hole Package Planar Transformer | |
Power Transformer
from iNRCORE
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| The PL10524NL from iNRCORE is a High Frequency Planar Transformer. It has a primary turn of 6T & 6T (dual primary) and a secondary turn of 4T (configurable as four 1T windings) with an effective step-down ratio of 1.5:1. This transformer has a leakage inductance of 0.60 µH. It is available in a through-hole package that measures 47.5 × 40.0 × 19.2 mm. |
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| Ultra Low Forward Voltage Bridge Rectifier | |
Power Diode
from Panjit Semiconductor
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| The GBJ3508HULV from Panjit Semiconductor is an Ultra Low Forward Voltage Bridge Rectifier that is ideal for server/AI/IND, PC power, and gaming applications. It has a forward voltage of 0.88 V and a forward current of 35 A. This rectifier has a repetitive peak reverse voltage of 800 V, a reverse current of up to 1 µA. It is available in a through-hole package that measures 29.70 x 36.7 mm. |
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| Gate Driver For Reverse-Battery Protection | |
Gate Driver
from Diodes Incorporated
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| The AP74701QTA8-7 from Diodes Incorporated is an AEC-Q100-Qualified Ideal Diode Controller designed for reverse-battery protection in automotive and industrial systems. It requires an input voltage range of 3.2-65 V (with 3.9 V startup). It has a low quiescent current of 80 μA in active mode and only 1 μA in shutdown. It is available in a surface-mount package that measures 2.95 x 2.95 x 1.10 mm. |
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| 30 V N-Channel Power MOSFET | |
MOSFET
from ROHM Semiconductor
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| The RS7E200BG from ROHM Semiconductor is an N-Channel Power MOSFET that is ideal for motor drives, DC/DC converters, and switching applications. It has a drain-source breakdown voltage of over 30 V, a gate threshold voltage of up to 2.5 V, and a drain-source on-resistance of less than 0.67 milli-ohms. It is available in a surface-mount package that measures 4.9 x 5.9 mm. |
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| Automotive-Qualified 1-Channel H-bridge Gate Driver | |
Gate Driver
from Toshiba
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| The TB9103FTG from Toshiba is an Automotive-Qualified Single-Channel H-bridge Gate Driver IC that is designed specifically for automotive applications. It requires an operating voltage of 4.5-18 V. This gate driver incorporates a charge pump circuit and utilizes an N-type external MOSFET. It is available in a surface-mount package that measures 4 x 4 mm. |
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| Sponsored by Oman EV Show | | |
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| 2000 W Non-Isolated DC-DC Converter | |
DC to DC Converter
from Vicor
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| The DCM3735S60D13L0TN1 from Vicor is a Non-Isolated DC-DC Converter that steps down a DC input voltage of 40-60 V to a DC output voltage of 10-12.5 V. This buck converter delivers continuous power of up to 2000 W with a maximum output current of 164 A and achieves a peak efficiency of 96.4%. It is available as a module that measures 36.7 x 35.4 x 5.2 mm. |
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| 3.3 µH Automotive-Grade Shielded Power Inductor | |
Power Inductor
from Wurth Elektronik
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| The 74438324033 from Wurth Elektronik is an Automotive-Grade Shielded Power Inductor. This inductor has an inductance of 3.3 µH, a saturation current rating of up to 3.3 A, and a dynamic contact resistance (DCR) of up to 260 milli-ohms. It has an operating voltage of 80 V and a rated current of 1.7 A. It is available in a surface-mount package that measures 2.5 x 2.0 x 1.2 mm. |
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| 150 V Enhancement-Mode N-Channel MOSFET | |
MOSFET
from Micro Commercial Components
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| The MCG062N15Y-TP from Micro Commercial Components is an Enhancement-Mode N-Channel MOSFET. It has a drain-source breakdown voltage of over 150 V, a gate threshold voltage of up to 4.0 V, and a drain-source on-resistance of 62 milli-ohms. This MOSFET has a power dissipation of less than 52 W. It is available in a surface-mount package that measures 3.45 x 3.45 x 0.85 mm. |
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| 60 A Current-Limiting Protection eFuse IC | |
eFuse IC
from Alpha & Omega Semiconductor
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| The AOZ17517QI-01 from Alpha & Omega Semiconductor is a Current-Limiting Protection eFuse designed for applications that require front-end protection at the input line. It requires an input voltage of 4.5-20 V and has a maximum output current of 60 A. This eFuse IC has an on-state resistance of 0.65 ohms. It is available in a surface-mount package that measures 5 x 5 mm. |
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| 1.2 F Compact Supercapacitor | |
Supercapacitor
from Ligna Energy
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| The S-POWER 2S from Ligna Energy is a Supercapacitor designed for applications requiring rapid charge and discharge cycles. It has a capacitance of 1.2 F, a capacitance tolerance of -20% to +20% and a rated voltage of 2.7 VDC. It has an equivalent series resistance (ESR) of 500 milli-ohms. It is available in a through-hole package that measures 49.6 x 30 x 0.45 mm. |
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| 1700 V Single IGBT Module | |
IGBT
from Powerex
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| The QIS1760002 from Powerex is a Single IGBT Module designed for use in switching applications. It has a collector-emitter voltage of over 1700 V, a gate threshold voltage of 6.6 V, and a saturated collector-emitter voltage of 2.5 V. This IGBT has a continuous collector current of up to 600 A and can withstand an isolation voltage of 3500 V. It is available as a module that measures 110 x 80 x 36 mm. |
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