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| 200 V N-Channel MOSFET | |
MOSFET
from VBsemi Electronics
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| The VBGQA1202N from VBsemi Electronics is an N-Channel MOSFET. It has a drain-source breakdown voltage of over 200 V, a gate threshold voltage of up to 3 V, and a drain-source on-resistance of 18 milli-ohms. This MOSFET has a continuous drain current of up to 50 A. This RoHS-compliant MOSFET is available in a surface-mount package that measures 6.126 x 5.096 x 1.000 mm. |
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| Dual Electronic Fuse IC for HD/SSD Driver Applications | |
eFuse IC
from STMicroelectronics
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| The STEF512PUR from STMicroelectronics is a Dual Electronic Fuse designed to protect circuitry on the output from over-current and over-voltage events in applications not requiring hot swap operation and in-rush current control. It requires an input voltage of up to 25 V and an output voltage of less than 18 V. It is available in a surface-mount package that measures 2 x 3 mm. |
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| 1200 V Trench IGBT Module | |
IGBT
from Semikron Danfoss
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| The SEMiX205GD12M7HD-M07 from Semikron Danfoss is a Trench IGBT Module. It has a collector-emitter voltage of over 1200 V, a gate threshold voltage of 6 V, and a saturated collector-emitter voltage of 1.5 V. This IGBT has a continuous collector current of up to 269 A and a peak collector current of less than 400 A. This IGBT module measures 129.50 x 70.15 x 20.50 mm. |
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| 75 mV Radiation-Hardened LDO Regulator | |
LDO Voltage Regulator
from Renesas Electronics
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| The ISL73052SEH from Renesas is a Radiation-Hardened Single-Output LDO Regulator that is ideal for LDO regulators for space power systems, DSP/FPGA/microprocessor core power supplies, post regulation of SMPS, and down-hole drilling applications. It requires an input voltage of 4-13.2 V. It is available in a surface-mount package that measures 10.16 x 7.06 x 2.16 mm. |
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| 25 V Automotive-Grade N-Channel JFET | |
Junction Field Effect Transistor (JFET)
from onsemi
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| The NSVJ6904DSB6T1G from onsemi is an Automotive-Grade N-Channel Junction Field-Effect Transistor. It has a drain-source voltage of up to 25 V and a gate-drain voltage of -25 V. This AEC−Q101 qualified junction field effect transistor (JFET) has a power dissipation of less than 700 mW. This JFET is available in a surface-mount package that measures 2.9 x 2.8 x 1.05 mm. |
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| 1.5 µH Automotive-Grade Inductor | |
Power Inductor
from Murata
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| The LQW18FT1R5K0HL from Murata is an Automotive-Grade Inductor that is ideal for automotive powertrain/safety equipment, automotive infotainment/comfort equipment, and medical equipment applications. This AEC-Q200-qualified inductor has an inductance of 1.5 µH and an inductance tolerance of ±10%. It is available in a surface-mount package that measures 1.60 x 0.94 x 1.15 mm. |
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| Automotive-Qualified High Surge Current SIDACs | |
Sidac
from Littelfuse
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| The Pxxx0S3H Series from Littelfuse are Automotive-Qualified High Surge Current SIDACs that are designed to protect equipment located in hostile environments from overvoltage transients. They have a stand-off voltage of 300 V. These SIDACs provide surge immunity of up to 2000 A. They are available in surface-mount packages that measure 7.75 x 5.59 x 2.06 mm. |
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| Sponsored by Microgrids & Energy Resilience Summit | | Microgrids & Energy Resilience Summit | | The Microgrids & Energy Resilience Summit 2025 will bring together defense, government, and industry leaders to advance scalable, cyber-secure energy solutions, driving mission readiness, resilience, and innovation across military and federal installations.Click here to learn more. | | | |
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| 2200 V Rectifier Diode Module | |
Power Diode
from Hitachi Energy
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| The 5SED 0890T2260 from Hitachi Energy is a Rectifier Diode. It has a repetitive reverse voltage rating of up to 2200 V and a peak reverse current of 30 mA. This rectifier diode can withstand an isolation voltage of 3600 V and safeguards against a forward surge current of 22000 A. It has a forward voltage rating of 1.1 V. It is available as a module that measures 150 x 60 x 52 mm. |
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| 50 A Low Voltage Standard Fuse | |
Fuses
from Eaton
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| The 011-9127 from Eaton is a Low Voltage Standard Fuse. It has a voltage rating of 440 V (AC) and a current rating of 50 A. This RoHS-compliant fuse is available in a screw-mount package that measures 82 x 118 x 86 mm and weighs 30.64 g. |
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| 1200 V Bare Die SiC MOSFET | |
MOSFET
from Wolfspeed
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| The CPM3-1200-0032A from Wolfspeed is a Bare Die Silicon Carbide MOSFET. It has a drain-source breakdown voltage of 1200 V, a gate threshold voltage of 2.5 V, and a drain-source on-resistance of less than 41.6 milli-ohms. This MOSFET has a continuous drain current of 63 A. This RoHS-compliant MOSFET has high blocking voltage, low on-resistance, and high-speed switching. |
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| Automotive Grade Ultra-High Sensitivity Current Transducer | |
Current Transducer
from Diodes Incorporated
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| The AHE101 Series from Diodes Incorporated are Automotive-Qualified InSb Ultra-High Sensitivity Hall Element Current Transducers designed for precise magnetic field detection. These AEC-Q100/101/104/200-qualified transducers support a maximum input current of 20 mA with an input voltage up to 2 V. They are available in compact surface-mount packages that measure 2.9 x 1.45 x 1.10 mm. |
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| Monolithic Low-Power Gate Driver | |
Gate Driver
from Analog Devices
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| The TMC9660 from Analog Devices is a Monolithic Gate Driver IC that is ideal for robotics, power tools, gardening, automated guided vehicles, pumps, factory automation, desktop manufacturing, e-bikes, light electric vehicles, and industrial 3D printing applications. It requires an input voltage of 7.7-70 V. It is available in a surface-mount package that measures 9 x 9 mm. |
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| 800 A Automotive Grade Dual Function Varicon | |
Varistor
from Bourns
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| The OV 14 K 105 MX 801 from Bourns is an Automotive Grade Dual Function Varicon designed to protect against voltage surges in a voltage region and against radio frequency noise. It has an AC voltage rating of 14 V, a DC voltage rating of 16 V, and a clamping voltage of 40 V. It can withstand a peak pulse current of 800 A. It is available in a through-hole package that measures 9 x 7.5 mm. |
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| 200 V N-Channel Power MOSFET | |
MOSFET
from iDEAL Semiconductor Devices
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| The iS20M028S1P from iDEAL Semiconductor Devices is an N-channel power MOSFET. It has a drain-source voltage of over 200 V, a gate threshold voltage of 4.1 V, and a drain-source on-resistance of 25 milli-ohms. This MOSFET has a continuous drain current of up to 40 A. This RoHS-compliant MOSFET is available in a surface-mount package that measures 31.24 x 10.66 x 4.82 mm. |
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| 100 mA CMOS-based Positive Voltage Regulators | |
LDO Voltage Regulator
from ABLIC
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| The S-1230 Series from ABLIC are CMOS-based Positive Voltage Regulators. These LDO regulators require an operational voltage of 66 V. They provide an output voltage of 1.8-5 V and have a low consumption current of 2.0 µA. These LDO regulators are based on CMOS technology and feature a built-in overcurrent protection circuit, thermal shutdown circuit, and a built-in open-loop protection circuit. |
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| 80 A Non-Isolated Unregulated DC-DC Converters | |
DC to DC Converter
from Flex Power Modules
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| The BMR313 Series from Flex Power Modules are Non-Isolated Unregulated DC-DC Converters that convert an input voltage of 38-60 V to an output voltage of 9.5-15 V. They deliver an output current of 80 A, an output power of 1000 W, and have an efficiency of 97.2%. They are available in a horizontal surface-mount package that measures 23.4 x 17.8 x 7.65 mm. |
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| 7640 V Automotive Grade BMS Transformer | |
Power Transformer
from iNRCORE
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| The RA1063NL from iNRCORE is an Automotive Grade BMS Transformer designed for use with ADI LTC6804/681X series, NXP MC33771/33772 and TI BQ79616. This AEC-Q200-compliant center-tapped transformer has a turns ratio of 1:1. It has an inductance of up to 450 µH. This transformer is available in a surface-mount package that measures 28 x 13 x 10 mm. |
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| 60 A Smart eFuse | |
eFuse IC
from Alpha & Omega Semiconductor
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| The AOZ17517QI-02 from Alpha & Omega Semiconductor is a Smart eFuse. It requires an input voltage of 4.5-20 V. This eFuse has a low typical on-resistance of 0.65 milli-ohms and offers programmable output soft-start and current limit to control inrush current into capacitive loads. It is available in a surface-mount package that measures 5 x 5 mm . |
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| 5.5 A Integrated Half-bridge Motor Driver | |
Motor Driver IC
from Power Integrations
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| The BRD2165C-TL from Power Integrations is an Integrated Half-bridge Motor Driver. It has a breakdown voltage of over 600 V and an output current of up to 5.5 A. This motor driver withstands a temperature of –40 to +150 °C and achieves up to 99% efficiency, eliminating the need for an external heat sink. It is available in a surface-mount package that measures 13.63 x 9.40 mm. |
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