| Featured Products this Week |
|
|
| 40 V CMOS Low Dropout Linear Regulator | |
LDO Voltage Regulator
from Analog Devices
|
| The ADPL44002 from Analog Devices is a CMOS Low Dropout (LDO) Linear Regulator. It requires an input voltage of 2.7-40 V. This LDO regulator provides an output voltage of 1.5-5 V and has a drop-out voltage of up to 30-450 mV. This regulator provides user-programmable soft start, low shutdown current. It is available in a surface-mount package that measures 2 x 2 mm. |
| |
Download Datasheet
Product Details | |
|
|
|
| 70 F Hybrid Supercapacitor | |
Supercapacitor
from Eaton
|
| The HS/HSL1025-3R8706-R from Eaton is an Advanced Hybrid Supercapacitor designed for backup power, pulse power, and hybrid power systems. It has a capacitance of 70 F and a capacitance tolerance of ±20%. This supercapacitor has a voltage rating of 3.8 V and a current rating of less than 0.35 A. It is available in a through-hole package that measures 52 x 10 mm. |
| |
Download Datasheet
Product Details | |
|
|
|
| 2200 V Rectifier Diode | |
Power Diode
from Hitachi Energy
|
| The 5SED 0890T2250 from Hitachi Energy is a Rectifier Diode. It has a forward voltage of less than 1.1 V and a forward current of up to 889 A. This power diode has a repetitive peak reverse voltage of 2200 V and a repetitive peak reverse current of less than 30 mA. It is available in an industry-standard module packaging that measures 150 x 60 x 52 mm. |
| |
Download Datasheet
Product Details | |
|
|
|
|
|
| 1.5 µH Automotive-Grade Inductor | |
Power Inductor
from Murata
|
| The LQW18FT1R5K0HL from Murata is an Automotive-Grade Inductor that is ideal for automotive powertrain/safety equipment, automotive infotainment/comfort equipment, and medical equipment applications. This AEC-Q200-qualified inductor has an inductance of 1.5 µH. It is available in a surface-mount package that measures 1.60 x 0.94 x 1.15 mm. |
| |
Download Datasheet
Product Details | |
|
|
|
| 130 V TVS Diodes | |
Power Diode
from Littelfuse
|
| The DFNAK3 Series from Littelfuse are TVS Diodes that offer a clamping voltage lower than alternative technologies such as MOVs and GDTs. They have a breakdown voltage of up to 100 V and a clamping voltage of over 130 V. These TVS diodes have a peak pulse current of 3000 A. They are available in surface-mount packages that measure 10.7 x 8.2 x 3.1 mm. |
| |
Download Datasheet
Product Details | |
|
|
|
| 15 V Automotive-Qualified N-Channel JFET | |
Junction Field Effect Transistor (JFET)
from onsemi
|
| The NSVJ3557SA3T1G from onsemi is an Automotive-Qualified N-Channel Junction Field-Effect Transistor. This AEC-Q101-qualified JFET has a drain-source voltage of up to 15 V and a gate-source voltage of -15 V. It has a power dissipation of less than 200 mW. This RoHS-compliant JFET is available in a surface-mount package that measures 3.05 x 2.7 mm. |
| |
Download Datasheet
Product Details | |
|
|
|
|
|
| 200 V N-Channel MOSFET | |
MOSFET
from VBsemi Electronics
|
| The VBGQA1202N from VBsemi Electronics is an N-Channel MOSFET. It has a drain-source breakdown voltage of over 200 V, a gate threshold voltage of up to 3 V, and a drain-source on-resistance of 18 milli-ohms. This MOSFET has a continuous drain current of up to 50 A. This RoHS-compliant MOSFET is available in a surface-mount package that measures 6.126 x 5.096 x 1.000 mm. |
| |
Download Datasheet
Product Details | |
|
|
|
| Electronic Fuse for 12 V Power Line | |
eFuse IC
from STMicroelectronics
|
| The STEF12 from STMicroelectronics is an Integrated Electronic Fuse optimized for 12 V power lines. It has a continuous current of 3.6 A and an output clamp voltage of 15 V. This eFuse IC features an on-resistance of 53 milliohms and provides controlled delay and turn-on times. It is available in a surface-mount package that measures 3 x 3 mm. |
| |
Download Datasheet
Product Details | |
|
|
|
| 1200 V SiC Dual Schottky Diode | |
Power Diode
from Powerex
|
| The QRC1213SA1 from Powerex is a Silicon Carbide (SiC) Schottky Diode. It has a DC current of 130 A and has a peak reverse voltage of 1200 V. This diode supports an isolation voltage of 3500 V and has a forward voltage drop of up to 2.05 V. It has a reverse leakage current of 1.2 mA and has a maximum power dissipation of 319 W. This RoHS-compliant diode measures 94 x 34 x 30 mm. |
| |
Download Datasheet
Product Details | |
|
|
|
| Radiation-Hardened Single-Output LDO Regulator | |
LDO Voltage Regulator
from Renesas Electronics
|
| The ISL75052SEH from Renesas is a Radiation-Hardened Single-Output LDO Regulator that is ideal for space power systems, DSP/FPGA/microprocessor core power supplies, post-regulation of SMPS, and down-hole drilling applications. It requires an input voltage of 4-13.2 V. This LDO provides an adjustable output voltage from 0.6-12.7 V and has a dropout voltage of 75 mV. |
| |
Download Datasheet
Product Details | |
|
