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| 2300 V High Power IGBT Module | |
IGBT
from Fuji Electric
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| The 2MBI1200XZF230-50 from Fuji Electric is a 2-Pack High Power IGBT Module. It has a collector-to-emitter voltage of up to 2300 V, a gate-emitter threshold voltage of 7 V, and a collector-to-emitter saturation voltage of 2.75 V. This IGBT has a collector current of 1200 A and a gate-emitter leakage current of less than 600 nA. It is available as a module that measures 144 x 99 x 40 mm. |
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| 600 V Sensitive Gate Silicon-Controlled Rectifier | |
Silicon Controlled Rectifier
from Diodes Incorporated
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| The MCR100-8(LS) from Diodes Incorporated is a Sensitive Gate Silicon-Controlled Rectifier with a blocking voltage of 600 V. It has a peak forward on-state voltage of up to 1.5 V, an on-state current rating of 0.25 A, and a gate trigger current of 50 µA. This RoHS-compliant SCR is available in a surface-mount package that measures 3.04 x 1.60 x 1.20 mm. |
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| 200 W Isolated Fixed-Ratio DC-DC Converter | |
DC to DC Converter
from Vicor
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| The BCM48BF040T200B00 from Vicor is an Isolated Fixed-Ratio DC-DC Converter that converts an input voltage of 38-55 V to an output voltage of 3.2-4.6 V. It delivers an output power of 200 W. This converter provides enable/disable control and internal temperature monitoring. It is available in a surface-mount package that measures 32.50 x 22.00 x 6.73 mm. |
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| 1200 V Dual Switch IGBT Module | |
IGBT
from Mitsubishi Electric
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| The CM1200DW-24T from Mitsubishi Electric is a Dual Switch IGBT Module that is ideal for photovoltaic (PV) inverters, AC motor control, and power supply applications. It has a collector-emitter breakdown voltage of over 1200 V, a gate threshold voltage of 6 V. This RoHS-compliant IGBT is available as a module that measures 144 x 99.8 mm. |
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| 72000 µF Wet Tantalum Supercapacitor | |
Supercapacitor
from Vishay
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| The HE5C723K025BZSS from Vishay is a Wet Tantalum Supercapacitor that is ideal for industrial, avionics, military, and space applications. It has a capacitance of 72000 μF. This capacitor has a voltage rating of 25 V and an equivalent series resistance of less than 35 milli-ohms. It is available in a through-hole package that measures 35.56 x 12.395 mm. |
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| 5 V Baseplate-Cooled DC-DC Brick Converter | |
DC to DC Converter
from XP Power
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| The RDF15072S05 from XP Power is a Baseplate-Cooled DC-DC Brick Converter that converts input voltage of 14-160 V to an output voltage of 5 V. It has an output current of 25 A and a maximum capacitive load of 25000 µF. It delivers an output power of 150 W and has an efficiency of up to 89%. This converter is available as a module that measures 61.0 x 57.9 x 12.7 mm. |
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| 4500 V AlN-Based Dual Switch IGBT for Traction Applications | |
IGBT
from Powerex
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| The QID4515004 from Powerex is a Dual Switch IGBT that is ideal for high-voltage power supplies, medium-voltage drives, motor drives, and traction applications. It has a collector-emitter voltage of up to 4500 V, a gate threshold voltage of 6.3 V, and a saturated collector-emitter voltage of 3.8 V. This IGBT is available in a module that measures 140 x 73 mm. |
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| Sponsored by PCIM Asia 2025 | | |
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| 1200 V SiC Power Module | |
MOSFET
from ROHM Semiconductor
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| The SCZ4011KTB from ROHM Semiconductor is a Silicon Carbide Power Module that is designed for inverter and converter applications. It has a drain-source breakdown voltage of 1200 V, a gate threshold voltage of up to 4.8 V, and a drain-source on-resistance of less than 15 milli-ohms. This RoHS-compliant MOSFET is available in a through-hole package that measures 41 x 31.5 x 5 mm. |
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| 80 V TVS Diode | |
Power Diode
from Littelfuse
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| The DFNAK3-080C-D1 from Littelfuse is a TVS Diode that offers a clamping voltage lower than alternative technologies such as MOVs and GDTs. It has a stand-off voltage of up to 80 V and a clamping voltage of over 130 V. This TVS diode has a peak pulse current of 3000 A. It is available in a surface-mount package that measures 10.7 x 8.2 x 3.1 mm. |
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| 1700 V IGBT Power Module | |
IGBT
from Microchip Technology
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| The APTGX600A170TDP3EG from Microchip Technology is an IGBT Power Module. It has a collector-emitter voltage of up to 1700 V, a gate threshold voltage of 5.15-6.45 V, and a saturated collector-emitter voltage of 1.7-2.1 V. This low-profile IGBT has a continuous collector current of up to 600 A. It is available as a module that measures 152 x 62 x 20.4 mm. |
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