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New Power Electronics Products this Week - 1 July 2026

1 July 2026 Newsletter - everything PE

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Weekly Edition
Date: 1 July 2026
 
Sponsored by DoW Energy & Power Summit
 
 
Featured Products this Week
AC to DC Converter
24 V Open-frame Power Supply
AC to DC Converter  from Carlo Gavazzi

The SPPM241001FC from Carlo Gavazzi is an Open-frame Power Supply designed to provide reliable power in compact dimensions for industrial control and automation applications. It converts input voltages of 88-264 VAC or 100-373 VDC to a DC output voltage of 24 V. This AC-DC converter delivers output power up to 100 W and achieves efficiencies of up to 88%. It offers operational safety through multiple output protections.
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PMIC
High-Accuracy PMIC for Industrial MPU Applications
PMIC  from Microchip Technology

The MCP16503 from Microchip Technology is a High-Accuracy PMIC designed to support general-purpose embedded microprocessor units (eMPUs) requiring dynamic voltage scaling (DVS). This PMIC requires an input voltage of 2.7-5.5V. It integrates four DC-DC buck regulators and two auxiliary LDOs, with startup voltages selectable via resistors and full adjustment available through a 1 MHz I²C interface. It provides up to 1 A load capability on each buck channel.
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Power Diode
650 V SiC Schottky Barrier Diode
Power Diode  from Micro Commercial Components

The SICWT1065G4J from Micro Commercial Components is a Silicon Carbide Schottky Barrier Rectifier. This power diode has a forward voltage of 1.6 V and a continuous forward current of up to 30 A. It has a surge peak reverse voltage of less than 650 V and a reverse leakage current of 25 µA. This power diode has a repetitive peak reverse voltage of up to 650 V and a non-repetitive peak surge current of less than 75 A. It provides low switching losses and high efficiency.
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MOSFET
80 V N-Channel Power MOSFET
MOSFET  from ROHM Semiconductor

The AG166FNH7FRATCB from ROHM Semiconductor is an N-Channel Power MOSFET. It has a drain-source breakdown voltage of 80 V, a gate threshold voltage of up to 4.0 V, and a drain-source on-resistance of less than 18 milli-ohms. This AEC-Q101-qualified MOSFET has a continuous drain current of 40 A and has a power dissipation of 62 W. This MOSFET is available in a surface-mount package that measures 3.4 x 3.4 x 1.1 mm.
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Power Capacitor
900 V High Frequency Film Capacitor
Power Capacitor  from TDK Electronics

The B25696H0128K901 from TDK Electronics is a High Frequency Film Capacitor. It has a capacitance of 1280 µF with a capacitance tolerance of ±10%. This capacitor has a voltage rating of 900 Vdc and can withstand a surge current of up to 6900 A. It has an ESR rating of 1.26 milli-ohms and offers an inductance of 29 nH. This IP00-rated film capacitor uses metallised polypropylene film in an aluminium case with a resin top, and is a dry-type capacitor.
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Sponsored by DoW Energy & Power Summit
DoW Energy & Power Summit
DoW Energy & Power Summit
Defense Strategies Institute’s 8th Annual DoW Energy and Power Summit will bring together representatives from the DoW, military services, federal agencies, industry, academia, and other key stakeholders to advance energy efficiency, resiliency, affordability, and security across the Department of War and the federal government. Click here to learn more.
AC to DC Converter
20 W AC-DC Converters
AC to DC Converter  from RECOM Power

The RAC20-K Series from Recom Power are AC-DC Converters that step down AC input voltages of 85-305 V to DC output voltages of 5-48 V. These converters deliver output power of 20 W and have an efficiency of up to 84%. They are over-voltage category (OVC) III-rated and enable operation at altitudes of up to 5000 meters. These RoHS-compliant converters are equipped with integrated emission filters that align with the EN55032 “B” standard.
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Bipolar Junction Transistor
150 V PNP High-Voltage Transistor
Bipolar Junction Transistor  from Diodes Incorporated

The MMBT5401Q-7-F from Diodes Incorporated is a PNP High-Voltage Transistor. It has a collector-emitter breakdown voltage of -150 V, a collector-base breakdown voltage of -160 V, and an emitter-base breakdown voltage of -5 V. This transistor supports a continuous collector current of -600 mA and offers an electrostatic discharge of 4000 V. It has a power dissipation of 350 mW and an operating temperature range of -55 to +150°C.
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MOSFET
40 V Single N-Channel Automotive MOSFET
MOSFET  from Taiwan Semiconductor

The TQM070NH04CR RLG from Taiwan Semiconductor is a Single N-Channel Automotive MOSFET. It has a drain-source breakdown voltage of 40 V, a gate threshold voltage of up to 3.6 V, and a drain-source on-resistance of less than 8.4 milli-ohms. This AEC-Q101-qualified MOSFET has a continuous drain current of 16-54 A and a pulsed drain current of 216 A. It features an outstanding figure of merit (FOM) and withstands a junction temperature of up to 175°C.
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Voltage Transducer
5 V Single-Phase DC Voltage Transducer
Voltage Transducer  from Shenzhen Sensor Electronic Technology

The CE-VZ02-34MH2-0.2 from Shenzhen Sensor Electronic Technology is a Single-Phase DC Voltage Transducer used in real-time detection/monitoring of DC voltage signals, communications, power, railways, industrial control and other fields. It requires a power supply of 24 V and can measure up to 300 VDC, providing an output voltage of 0-5 V. This transducer has an input-output isolation voltage of more than 2500 VDC and has a rated power consumption of 0.4 W.
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Power Inductor
0.22 µH Shielded Inductor
Power Inductor  from Sumida

The MCDMCE0518DS-R22MC from Sumida is a Power Inductor. It has a nominal inductance of 0.22 μH with a tolerance of ±20% and has a DC resistance of up to 3 milli-ohms. This inductor has a maximum saturation current of 27.2A. It is designed to operate over a temperature range of-55°C to+125°C. This RoHS-compliant, magnetically shielded inductor is available in a surface-mount package that measures 5.1 × 5.3 × 1.8 mm.
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Sponsored by DoW Energy & Power Summit
 
 
GaN Power Transistor
650 V GaN Field Effect Transistor
GaN Power Transistor  from Nexperia

The GANE350-650FBA from Nexperia is a GaN Field Effect Transistor (FET). It has a drain-source voltage of up to 650 V, a gate-source threshold voltage of up to 2.5 V, and a drain-source on-state resistance of up to 350 milli-ohms. This GaN transistor has a drain current of up to 6 A and a power dissipation of up to 65 W. It is a normally off enhancement mode transistor that offers superior performance and features ESD protection.
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DC to DC Converter
800 W Isolated DC-DC Converters
DC to DC Converter  from Flex Power Modules

The BMR684 Series from Flex Power Modules are Isolated DC-DC Converters that convert an input voltage of 36-75 V to an output voltage of 50 V. They deliver an output current of 16 A, an output power of 800 W, and have an efficiency of 96%. These converters provide an isolation voltage of 1500 V. They feature monotonic start-up as well as remote control and are protected against output over-voltage, output short circuit and over-temperature conditions.
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Power Diode
JEDEC-Qualified TVS Diodes for Portable Devices
Power Diode  from Bourns

The CDSOD323-TxxSC Series from Bourns are JEDEC-qualified TVS Diodes designed for single line surge and ESD protection in portable devices such as computer notebooks, cellular phones, personal digital assistants (PDAs) and digital cameras. They have a working voltage of 3.3-36 V in a unidirectional or bidirectional configuration. These diodes provide ESD protection of up to 30 kV and surge protection above 24 A. They feature peak pulse power up to 500 W.
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PMIC
Current Mode 6-pin Boost PFC Controller
PMIC  from STMicroelectronics

The L6462A from STMicroelectronics is a Current-Mode 6-pin Boost PFC Controller for transition-mode boost PFC converters to be used in cost-sensitive and energy-efficient solutions. It requires a supply voltage of 9-27 V and is optimised for 90 VAC - 264 VAC/400 VOUT applications. This controller features low THD over a broad load range without requiring input voltage sensing or classical analog multiplier. It supports valley lock and valley skipping.
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