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Power Electronics Industry Update This Week - 15 June 2026

15 June 2026 Newsletter - everything PE

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Weekly Edition
Date: 15 June 2026
 
Sponsored by Micross
 
 
Latest News this Week
Nexperia Broadens 650 V GaN FET Lineup for AI and Energy Systems - Nexperia
Diodes Expands Smart Load Switch Portfolio for Automotive Electronics - Diodes Incorporated
EPC Introduces Compact GaN-Based BLDC Inverter for Humanoids and Drones - Efficient Power Conversion
Quaise Energy Advances Superhot Geothermal Technology with Project Obsidian - Quaise Energy
Rompower to Present 800 V AI Power Architectures at PCIM Europe 2026 - Rompower
Renesas Simplifies Digital Power Design with PowerNavigator Software - Renesas
onsemi Launches Elite Pairing Studio for SiC Power Design - onsemi
Skeleton Powers Next-Generation AI Data Centers with Graphene Technology - Skeleton Technologies
nVent's Liquid Cooling Solutions Drive AI & High-Performance Computing - nVent
ROHM's SiC MOSFET Adopted in AI Server Battery Backup Units - ROHM Semiconductor
More News
Sponsored by Micross
Hi-Rel Diodes for Aerospace, Defense, and Space
Hi-Rel Diodes for Aerospace, Defense, and Space
Micross diodes are hermetic, non-cavity, double-plug construction with category I metallurgical bonds, available in standard axial & surface-mount packages, or custom as required. Qualified to JAN, JANTX, JANTXV, & JANS (Space) quality levels. Click here to learn more.
New White Papers & Articles
The Benefits of Using SiC Technology in Next Generation Programmable Power Supplies - EA Elektro-Automatik
Oscilloscopes vs Digitizers: Choosing the Right Platform for Wideband Signal Acquisition - Vitrek
800VDC Power Delivery Architecture and Advantages for Next-Generation AI & GPU Data Centers - Enteligent
The Principles of Varistor Selection - Kyocera AVX
Understanding Inertia Ratio in Synchronous Motor Control - Schneider Electric
More Whitepapers
Featured Power Electronics Products this Week
MOSFET
80 V Half-Bridge Power MOSFET
MOSFET  from Vishay

The VS-HOT200C080 from Vishay is a Half-Bridge Power MOSFET. It has a drain-source breakdown voltage of over 80 V, a gate threshold voltage of up to 4 V, and a drain-source on-resistance of 0.45-2.35 milli-ohms. This MOSFET has a continuous drain current of up to 243 A and a power dissipation of 194 W. It integrates a half-bridge inverter configuration along with built-in current sensing and temperature sensing capabilities.
Download Datasheet Product Details
Silicon Controlled Rectifier
600 V AEC-Q101 Qualified SCR Thyristor
Silicon Controlled Rectifier  from Littelfuse

The SJ6032N2ARP from Littelfuse is a Silicon Controlled Rectifier that is designed for unidirectional switch applications such as phase control in heating, motor speed controls and AC rectifier and voltage regulator. It has a break-over voltage of up to 600 V and a break-over current of less than 380 A. This UL-1557 recognised thyristor has a gate trigger voltage of 1.5 V and a gate trigger current of 3 to 15 mA. It has an average gate power dissipation of 1W and operates from -40 to 150°C.
Download Datasheet Product Details
MOSFET
750 V N-Channel SiC Power MOSFET
MOSFET  from ROHM Semiconductor

The SCT4013DLLTRDC from ROHM Semiconductor is an N-Channel SiC Power MOSFET. It has a drain-source breakdown voltage of 750 V, a gate threshold voltage of 4.8 V, and a drain-source on-resistance of less than 13 milli-ohms. This MOSFET has a continuous drain current of 120 A and has a power dissipation of 405 W. It offers low on-resistance and has a fast switching speed. This RoHS-compliant MOSFET is available in a surface-mount package.
Download Datasheet Product Details
Solar Panels
Half-Cell Monocrystalline PV Modules
Solar Panels  from HT Saae

The HT48-210R(ND)-F 440-475W Series from HT Saae are Half-Cell Monocrystalline PV Modules. They deliver output power ranging from 440 W to 475 W at STC (Standard Test Condition) and from 334 W to 360 W at NMOT (Nominal Module Operating Temperature), with a maximum module efficiency of up to 23.8%. These solar panels provide a maximum power voltage of 28.86-30.61 V and a maximum current of up to 15.53 A.
Download Datasheet Product Details
Sponsored by Micross
 
 
Power Inductor
Power Inductors with High Inductance Stability
Power Inductor  from Elytone

The ET-51000 Series from Elytone are Power Inductors designed for general-purpose use, switching mode power converters and ripple filters. They have an inductance of 47-2200 µH. These power inductors have a current rating of 0.42-3.0 A and a DCR of up to 1.8 ohms. They have high inductance stability with variable volt-seconds and load currents. These power inductors are available in through-hole packages.
Download Datasheet Product Details
Current Transducer
High Precision Coreless Current Sensor
Current Transducer  from Infineon Technologies

The TLI5570-RE35E1-E0001 from Infineon Technologies is a High Precision Coreless Current Sensor with a differential analog interface. This current transducer requires a supply voltage of 1-5.5 V. It enables contactless, galvanically isolated current measurement, reducing power losses and minimizing parasitic inductance. This current transducer incorporates a non-amplified TMR bridge, perfect for 1-to-1 shunt replacement, reducing footprint and costs.
Download Datasheet Product Details
PMIC
Off-Line Zero Voltage Switching Flyback Switcher ICs
PMIC  from Power Integrations

The InnoMux2-EP Series from Power Integrations are Off-Line Zero Voltage Switching (ZVS) Flyback Switcher ICs designed for high-efficiency multi-output applications. They require an input voltage of 85-265 V. These PMICs integrate advanced zero-voltage switching (ZVS) flyback technology with up to three independently regulated outputs using a single controller and transformer. They eliminate the need for post regulators.
Download Datasheet Product Details
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