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2SD1007-R

Bipolar Junction Transistor by AiT Semiconductor
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2SD1007-R Image

The 2SD1007-R from AiT Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 5 V, Base Emitter Saturation Voltage 0.9 to 1.5 V, Emitter Cut off Current 100 nA, Collector Base Voltage 120 V, Collector Cut off Current 100 nA. Tags: Surface Mount, NPN Transistor. More details for 2SD1007-R can be seen below.

Product Specifications

Product Details

  • Part Number
    2SD1007-R
  • Manufacturer
    AiT Semiconductor
  • Description
    120 V, 0.7 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor View all
  • Polarity
    NPN
  • Emitter Base Voltage
    5 V
  • Base Emitter Saturation Voltage
    0.9 to 1.5 V
  • Emitter Cut off Current
    100 nA
  • Collector Base Voltage
    120 V
  • Collector Cut off Current
    100 nA
  • Collector Emitter Voltage
    120 V
  • Continuous Collector Current
    0.7 A
  • Pulse Collector Current
    1.2 A
  • DC Current Gain
    90 to 180
  • Gain Bandwidth Product
    90 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    2 W
  • Output Capacitance
    10 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes View all
  • Package Type
    Surface Mount View all
  • Package
    SOT-89

Technical Documents
View details on the manufacturer's website

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