DXTN78100CFGQ-7

Note : Your request will be directed to Diodes Incorporated.

DXTN78100CFGQ-7 Image

The DXTN78100CFGQ-7 from Diodes Incorporated is an Ultra-Low Saturation Voltage NPN Transistor. It has a collector-emitter of 100 V, a collector-base voltage of 150 V, and an emitter-base voltage of 8 V. This transistor supports a continuous collector current of up to 4 A, a peak pulse current of 8 A and offers a DC gain of over 420. It offers an ultra-low saturation voltage VCE(sat) of less than 340 mV at 4 A and a high current resistance of 32 milli-ohms. This RoHS-compliant NPN transistor is available in a surface-mount package that measures 3.3 x 3.3 x 0.80 mm and is ideal for MOSFET and IGBT gate drivers, load switches, low-voltage regulation, DC-DC converters, motor, solenoid, relay and actuator driver controls.

Product Specifications

Product Details

  • Part Number
    DXTN78100CFGQ-7
  • Manufacturer
    Diodes Incorporated
  • Description
    100 V Ultra-Low Saturation Voltage NPN Transistor

General

  • Type
    NPN Transistor View all
  • Polarity
    NPN
  • Emitter Base Voltage
    8 V
  • Base Emitter Saturation Voltage
    0.87 to 1.1 V
  • Emitter Cut off Current
    50 nA
  • Collector Base Voltage
    150 V
  • Collector Cut off Current
    0.1 to 10 µA
  • Collector Emitter Breakdown Voltage
    100 V
  • Collector Emitter Voltage
    100 V
  • Continuous Collector Current
    2 to 4 A
  • Pulse Collector Current
    8 A
  • DC Current Gain
    10 to 420
  • Gain Bandwidth Product
    150 to 210 MHz
  • Industry
    Military, Industrial, Commercial
  • Power Dissipation
    0.9 to 2.4 W
  • Output Capacitance
    12.5 pF
  • Operating Temperature
    -55 to 175 Degree C
  • RoHS Compliant
  • Package Type
    Surface Mount View all
  • Package
    PowerDI3333-8
  • Application
    MOSFET & IGBT gate drivers, Load switches, Low-voltage regulation, DC to DC converters, Motors, Solenoids, Relays and actuator drivers control

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