MMBTA14L

Bipolar Junction Transistor by AiT Semiconductor

Note : Your request will be directed to AiT Semiconductor.

MMBTA14L Image

The MMBTA14L from AiT Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 10 V, Emitter Cut off Current 100 nA, Collector Base Voltage 30 V, Collector Cut off Current 100 nA, Collector Emitter Breakdown Voltage 30 V. Tags: Surface Mount, NPN Transistor. More details for MMBTA14L can be seen below.

Product Specifications

Product Details

  • Part Number
    MMBTA14L
  • Manufacturer
    AiT Semiconductor
  • Description
    30 V, 0.3 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor View all
  • Polarity
    NPN
  • Emitter Base Voltage
    10 V
  • Emitter Cut off Current
    100 nA
  • Collector Base Voltage
    30 V
  • Collector Cut off Current
    100 nA
  • Collector Emitter Breakdown Voltage
    30 V
  • Collector Emitter Voltage
    30 V
  • Continuous Collector Current
    0.3 A
  • DC Current Gain
    10000 to 20000
  • Gain Bandwidth Product
    125 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    225 mW
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
  • Package Type
    Surface Mount View all
  • Package
    SOT-23

Technical Documents

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