BCW66GTR

Bipolar Junction Transistor by Central Semiconductor (584 more products)

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BCW66GTR Image

The BCW66GTR from Central Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 5 V, Base Emitter Saturation Voltage 1.25 to 2 V, Emitter Cut off Current 20 nA, Collector Base Voltage 75 V, Collector Cut off Current 20 µA. Tags: Surface Mount, NPN Transistor. More details for BCW66GTR can be seen below.

Product Specifications

Product Details

  • Part Number
    BCW66GTR
  • Manufacturer
    Central Semiconductor
  • Description
    45 V, 800 mA, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    5 V
  • Base Emitter Saturation Voltage
    1.25 to 2 V
  • Emitter Cut off Current
    20 nA
  • Collector Base Voltage
    75 V
  • Collector Cut off Current
    20 µA
  • Collector Emitter Breakdown Voltage
    45 V
  • Collector Emitter Voltage
    45 V
  • Continuous Collector Current
    800 mA
  • Pulse Collector Current
    1 A
  • DC Current Gain
    50 to 400
  • Gain Bandwidth Product
    170 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    350 mW
  • Output Capacitance
    8 pF
  • Operating Temperature
    -65 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Application
    General purpose switching and amplifier applications
  • Dimension
    3.05 x 2.49 x 1.09 mm

Technical Documents