BF259

Note : Your request will be directed to Central Semiconductor.

BF259 Image

The BF259 from Central Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 4 V, Collector Base Voltage 30 V, Collector Cut off Current 50 nA, Collector Emitter Breakdown Voltage 300 V, Collector Emitter Voltage 25 V. Tags: Through Hole, NPN Transistor. More details for BF259 can be seen below.

Product Specifications

Product Details

  • Part Number
    BF259
  • Manufacturer
    Central Semiconductor
  • Description
    25 V, 25 mA, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor View all
  • Polarity
    NPN
  • Emitter Base Voltage
    4 V
  • Collector Base Voltage
    30 V
  • Collector Cut off Current
    50 nA
  • Collector Emitter Breakdown Voltage
    300 V
  • Collector Emitter Voltage
    25 V
  • Continuous Collector Current
    25 mA
  • DC Current Gain
    25
  • Gain Bandwidth Product
    90 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    250 mW
  • Operating Temperature
    -65 to 200 Degree C
  • RoHS Compliant
  • Package Type
    Through Hole View all
  • Package
    TO-39

Technical Documents

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