CMLT5551HCTR

Note : Your request will be directed to Central Semiconductor.

CMLT5551HCTR Image

The CMLT5551HCTR from Central Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 6 V, Base Emitter Saturation Voltage 1 V, Emitter Cut off Current 50 µA, Collector Base Voltage 180 V, Collector Cut off Current 50 µA. Tags: Surface Mount, NPN Transistor. More details for CMLT5551HCTR can be seen below.

Product Specifications

Product Details

  • Part Number
    CMLT5551HCTR
  • Manufacturer
    Central Semiconductor
  • Description
    160 V, 0.6 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor View all
  • Polarity
    NPN
  • Emitter Base Voltage
    6 V
  • Base Emitter Saturation Voltage
    1 V
  • Emitter Cut off Current
    50 µA
  • Collector Base Voltage
    180 V
  • Collector Cut off Current
    50 µA
  • Collector Emitter Breakdown Voltage
    160 V
  • Collector Emitter Voltage
    160 V
  • Continuous Collector Current
    0.6 A
  • DC Current Gain
    30 to 250
  • Gain Bandwidth Product
    100 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    0.35 W
  • Output Capacitance
    15 pF
  • Operating Temperature
    -65 to 150 Degree C
  • RoHS Compliant
  • Package Type
    Surface Mount View all
  • Package
    SOT-563
  • Application
    High voltage, High current amplifier applications

Technical Documents

Latest Bipolar Junction Transistors

View more products