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CMUT5551TR

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CMUT5551TR Image

The CMUT5551TR from Central Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 6 V, Base Emitter Saturation Voltage 1 V, Collector Base Voltage 180 V, Collector Cut off Current 50 µA, Collector Emitter Breakdown Voltage 160 V. Tags: Surface Mount, NPN Transistor. More details for CMUT5551TR can be seen below.

Product Specifications

Product Details

  • Part Number
    CMUT5551TR
  • Manufacturer
    Central Semiconductor
  • Description
    160 V, 0.6 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor View all
  • Polarity
    NPN
  • Emitter Base Voltage
    6 V
  • Base Emitter Saturation Voltage
    1 V
  • Collector Base Voltage
    180 V
  • Collector Cut off Current
    50 µA
  • Collector Emitter Breakdown Voltage
    160 V
  • Collector Emitter Voltage
    160 V
  • Continuous Collector Current
    0.6 A
  • DC Current Gain
    30 to 250
  • Gain Bandwidth Product
    100 to 300 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    0.25 W
  • Output Capacitance
    6 pF
  • Operating Temperature
    -65 to 150 Degree C
  • RoHS Compliant
    Yes View all
  • Package Type
    Surface Mount View all
  • Package
    SOT-523
  • Application
    High voltage amplifier applications
  • Dimension
    1.7 x 1.7 x 0.78 mm

Technical Documents
View details on the manufacturer's website

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