2N3110

Bipolar Junction Transistor by Comset Semiconductors (294 more products)

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The 2N3110 from Comset Semiconductors is a Bipolar Junction Transistor with Emitter Base Voltage 5 V, Base Emitter Saturation Voltage 1.1 to 2 V, Emitter Cut off Current 10 nA, Collector Base Voltage 80 V, Collector Cut off Current 10 µA. Tags: Through Hole, NPN Transistor. More details for 2N3110 can be seen below.

Product Specifications

Product Details

  • Part Number
    2N3110
  • Manufacturer
    Comset Semiconductors
  • Description
    80 V, 1 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    5 V
  • Base Emitter Saturation Voltage
    1.1 to 2 V
  • Emitter Cut off Current
    10 nA
  • Collector Base Voltage
    80 V
  • Collector Cut off Current
    10 µA
  • Collector Emitter Breakdown Voltage
    40 V
  • Collector Emitter Voltage
    40 V
  • Continuous Collector Current
    1 A
  • DC Current Gain
    15 to 120
  • Gain Bandwidth Product
    60 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    0.8 to 5 W
  • Output Capacitance
    80 pF
  • Operating Temperature
    -65 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-39
  • Application
    Large signal, Low noise applications

Technical Documents