BTC3906N3-R-T1-G

Note : Your request will be directed to Cystech Electronics.

BTC3906N3-R-T1-G Image

The BTC3906N3-R-T1-G from Cystech Electronics is a Bipolar Junction Transistor with Emitter Base Voltage 6 V, Base Emitter Saturation Voltage 1 V, Emitter Cut off Current 50 nA, Collector Base Voltage 180 V, Collector Cut off Current 50 nA. Tags: Surface Mount, NPN Transistor. More details for BTC3906N3-R-T1-G can be seen below.

Product Specifications

Product Details

  • Part Number
    BTC3906N3-R-T1-G
  • Manufacturer
    Cystech Electronics
  • Description
    160 V, 600 mA, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor View all
  • Polarity
    NPN
  • Emitter Base Voltage
    6 V
  • Base Emitter Saturation Voltage
    1 V
  • Emitter Cut off Current
    50 nA
  • Collector Base Voltage
    180 V
  • Collector Cut off Current
    50 nA
  • Collector Emitter Breakdown Voltage
    160 V
  • Collector Emitter Voltage
    160 V
  • Continuous Collector Current
    600 mA
  • DC Current Gain
    180 to 390
  • Gain Bandwidth Product
    100 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    560 mW
  • Output Capacitance
    6 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
  • Package Type
    Surface Mount View all
  • Package
    SOT-23
  • Application
    General purpose applications requiring high breakdown voltage

Technical Documents

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