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BTD2444N3-R-T1-G

Bipolar Junction Transistor by Cystech Electronics (273 more products)
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BTD2444N3-R-T1-G Image

The BTD2444N3-R-T1-G from Cystech Electronics is a Bipolar Junction Transistor with Emitter Base Voltage 6 V, Base Emitter Saturation Voltage 1 V, Emitter Cut off Current 0.5 µA, Collector Base Voltage 40 V, Collector Cut off Current 0.5 µA. Tags: Surface Mount, NPN Transistor. More details for BTD2444N3-R-T1-G can be seen below.

Product Specifications

Product Details

  • Part Number
    BTD2444N3-R-T1-G
  • Manufacturer
    Cystech Electronics
  • Description
    25 V, 1.5 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    6 V
  • Base Emitter Saturation Voltage
    1 V
  • Emitter Cut off Current
    0.5 µA
  • Collector Base Voltage
    40 V
  • Collector Cut off Current
    0.5 µA
  • Collector Emitter Breakdown Voltage
    25 V
  • Collector Emitter Voltage
    25 V
  • Continuous Collector Current
    1.5 A
  • DC Current Gain
    180 to 390
  • Gain Bandwidth Product
    100 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    225 W
  • Output Capacitance
    15 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Application
    General purpose low frequency power amplifier applications

Technical Documents
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