BTNA29A3-0-TB-G

Bipolar Junction Transistor by Cystech Electronics (274 more products)

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The BTNA29A3-0-TB-G from Cystech Electronics is a Bipolar Junction Transistor with Emitter Base Voltage 12 V, Base Emitter Saturation Voltage 1.35 to 2 V, Emitter Cut off Current 100 nA, Collector Base Voltage 100 V, Collector Cut off Current 500 nA. Tags: Through Hole, NPN Transistor. More details for BTNA29A3-0-TB-G can be seen below.

Product Specifications

Product Details

  • Part Number
    BTNA29A3-0-TB-G
  • Manufacturer
    Cystech Electronics
  • Description
    100 V, 0.5 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    12 V
  • Base Emitter Saturation Voltage
    1.35 to 2 V
  • Emitter Cut off Current
    100 nA
  • Collector Base Voltage
    100 V
  • Collector Cut off Current
    500 nA
  • Collector Emitter Breakdown Voltage
    100 V
  • Collector Emitter Voltage
    100 V
  • Continuous Collector Current
    0.5 A
  • DC Current Gain
    10000
  • Gain Bandwidth Product
    125 to 200 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    625 mW
  • Output Capacitance
    5 to 8 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-92
  • Note
    Configuration :- Dual

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