HBN2411S6R-0-T1-G

Bipolar Junction Transistor by Cystech Electronics (274 more products)

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The HBN2411S6R-0-T1-G from Cystech Electronics is a Bipolar Junction Transistor with Emitter Base Voltage 6 V, Base Emitter Saturation Voltage 1 to 1.2 V, Emitter Cut off Current 100 nA, Collector Base Voltage 75 V, Collector Cut off Current 100 nA. Tags: Surface Mount, NPN Transistor. More details for HBN2411S6R-0-T1-G can be seen below.

Product Specifications

Product Details

  • Part Number
    HBN2411S6R-0-T1-G
  • Manufacturer
    Cystech Electronics
  • Description
    50 V, 300 mA, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    6 V
  • Base Emitter Saturation Voltage
    1 to 1.2 V
  • Emitter Cut off Current
    100 nA
  • Collector Base Voltage
    75 V
  • Collector Cut off Current
    100 nA
  • Collector Emitter Breakdown Voltage
    50 V
  • Collector Emitter Voltage
    50 V
  • Continuous Collector Current
    300 mA
  • DC Current Gain
    20 to 390
  • Gain Bandwidth Product
    230 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    300 mW
  • Output Capacitance
    9.3 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-363
  • Note
    Configuration :- Dual

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