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HBN2515S6R-0-T1-G

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HBN2515S6R-0-T1-G Image

The HBN2515S6R-0-T1-G from Cystech Electronics is a Bipolar Junction Transistor with Emitter Base Voltage 6 V, Base Emitter Saturation Voltage 1.1 V, Emitter Cut off Current 100 nA, Collector Base Voltage 20 V, Collector Cut off Current 100 nA. Tags: Surface Mount, NPN Transistor. More details for HBN2515S6R-0-T1-G can be seen below.

Product Specifications

Product Details

  • Part Number
    HBN2515S6R-0-T1-G
  • Manufacturer
    Cystech Electronics
  • Description
    15 V, 800 mA, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor View all
  • Polarity
    NPN
  • Emitter Base Voltage
    6 V
  • Base Emitter Saturation Voltage
    1.1 V
  • Emitter Cut off Current
    100 nA
  • Collector Base Voltage
    20 V
  • Collector Cut off Current
    100 nA
  • Collector Emitter Breakdown Voltage
    15 V
  • Collector Emitter Resistance
    500 milli-ohm
  • Collector Emitter Voltage
    15 V
  • Continuous Collector Current
    800 mA
  • Pulse Collector Current
    1.5 A
  • DC Current Gain
    150 to 560
  • Gain Bandwidth Product
    100 to 300 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    200 mW
  • Output Capacitance
    6.5 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes View all
  • Package Type
    Surface Mount View all
  • Package
    SOT-363
  • Note
    Configuration :- Dual

Technical Documents
View details on the manufacturer's website

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