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APT13003HZTR-G1

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APT13003HZTR-G1 Image

The APT13003HZTR-G1 from Diodes Incorporated is a Bipolar Junction Transistor with Emitter Base Voltage 9 V, Base Emitter Saturation Voltage 1.2 V, Collector Cut off Current 10 µA, Collector Emitter Breakdown Voltage 800 V, Collector Emitter Voltage 800 V. Tags: Through Hole, NPN Transistor. More details for APT13003HZTR-G1 can be seen below.

Product Specifications

Product Details

  • Part Number
    APT13003HZTR-G1
  • Manufacturer
    Diodes Incorporated
  • Description
    800 V, 1.5 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor View all
  • Polarity
    NPN
  • Emitter Base Voltage
    9 V
  • Base Emitter Saturation Voltage
    1.2 V
  • Collector Cut off Current
    10 µA
  • Collector Emitter Breakdown Voltage
    800 V
  • Collector Emitter Voltage
    800 V
  • Continuous Collector Current
    1.5 A
  • Pulse Collector Current
    3 A
  • DC Current Gain
    5 to 30
  • Gain Bandwidth Product
    4 MHz
  • Industry
    Military, Industrial, Commercial
  • Power Dissipation
    1.1 W
  • Output Capacitance
    16 pF
  • Operating Temperature
    -65 to 150 Degree C
  • RoHS Compliant
    Yes View all
  • Package Type
    Through Hole View all
  • Package
    TO-92
  • Application
    Low Power AC-DC SMPS, Battery Chargers for Mobile Phone, Tablets, Smartphones, Power Supply for DVD
  • Note
    Weight :- 200 mg, Qualified to AEC-Q100/101/200

Technical Documents
View details on the manufacturer's website

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