MMSTA05-7-F

Bipolar Junction Transistor by Diodes Incorporated (105 more products)

Note : Your request will be directed to Diodes Incorporated.

The MMSTA05-7-F from Diodes Incorporated is a Bipolar Junction Transistor with Emitter Base Voltage 4 V, Base Emitter Saturation Voltage 1.2 V, Collector Base Voltage 60 V, Collector Cut off Current 100 nA, Collector Emitter Breakdown Voltage 60 V. Tags: Surface Mount, NPN Transistor. More details for MMSTA05-7-F can be seen below.

Product Specifications

Product Details

  • Part Number
    MMSTA05-7-F
  • Manufacturer
    Diodes Incorporated
  • Description
    60 V, 0.5 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    4 V
  • Base Emitter Saturation Voltage
    1.2 V
  • Collector Base Voltage
    60 V
  • Collector Cut off Current
    100 nA
  • Collector Emitter Breakdown Voltage
    60 V
  • Collector Emitter Voltage
    60 V
  • Continuous Collector Current
    0.5 A
  • DC Current Gain
    100
  • Gain Bandwidth Product
    100 MHz
  • Industry
    Military, Industrial, Commercial
  • Power Dissipation
    200 mW
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-323
  • Application
    Ideal for Medium Power Amplification and Switching.
  • Note
    Weight :- 0.06 grams

Technical Documents