MMSTA42-7-F

Note : Your request will be directed to Diodes Incorporated.

MMSTA42-7-F Image

The MMSTA42-7-F from Diodes Incorporated is a NPN Small Signal Transistor that is designed for low power amplification and switching applications. It has a collector-emitter breakdown voltage of over 300 V, a base-emitter breakdown voltage of up to 6 V, and a collector-emitter saturation voltage of less than 0.5 V. This transistor has a collector current of 200 mA and a power dissipation of 200 mW. It is encapsulated in a molded plastic package with a UL 94V-0 flammability rating for high durability. This RoHS-compliant Epitaxial Planar transistor is available in a surface-mount package that measures 2.2 x 2.2 x 1.0 mm and weighs 6 mg.

Product Specifications

Product Details

  • Part Number
    MMSTA42-7-F
  • Manufacturer
    Diodes Incorporated
  • Description
    300 V NPN Small Signal Transistor

General

  • Type
    NPN Transistor View all
  • Polarity
    NPN
  • Emitter Base Voltage
    6 V
  • Base Emitter Saturation Voltage
    0.9 V
  • Collector Base Voltage
    300 V
  • Collector Cut off Current
    100 nA
  • Collector Emitter Breakdown Voltage
    300 V
  • Collector Emitter Voltage
    300 V
  • Continuous Collector Current
    0.2 A
  • DC Current Gain
    40
  • Gain Bandwidth Product
    50 MHz
  • Industry
    Military, Industrial, Commercial
  • Power Dissipation
    200 mW
  • Output Capacitance
    3 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
  • Package Type
    Surface Mount View all
  • Package
    SOT-323
  • Application
    Ideal for Low Power Amplification and Switching.
  • Note
    Weight :- 0.06 grams

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