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2N5551

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2N5551 Image

The 2N5551 from Diotec Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 6 V, Base Emitter Saturation Voltage 1 V, Emitter Cut off Current 50 nA, Collector Base Voltage 160 V, Collector Cut off Current 50 nA. Tags: Through Hole, NPN Transistor. More details for 2N5551 can be seen below.

Product Specifications

Product Details

  • Part Number
    2N5551
  • Manufacturer
    Diotec Semiconductor
  • Description
    180 V, 600 mA, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor View all
  • Polarity
    NPN
  • Emitter Base Voltage
    6 V
  • Base Emitter Saturation Voltage
    1 V
  • Emitter Cut off Current
    50 nA
  • Collector Base Voltage
    160 V
  • Collector Cut off Current
    50 nA
  • Collector Emitter Voltage
    180 V
  • Continuous Collector Current
    600 mA
  • DC Current Gain
    30 to 250
  • Gain Bandwidth Product
    100 to 300 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    625 mW
  • Output Capacitance
    6 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes View all
  • Package Type
    Through Hole View all
  • Package
    TO-92
  • Application
    Signal processing Switching, Amplification Commercial grade

Technical Documents
View details on the manufacturer's website

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