BC546A

Bipolar Junction Transistor by Diotec Semiconductor (226 more products)

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BC546A Image

The BC546A from Diotec Semiconductor is an NPN Bipolar Junction Transistor that is ideal for signal processing, switching, and amplification applications. It has a collector-emitter breakdown voltage of over 65 V, a base-emitter voltage of 660 mV, and a collector-emitter saturation voltage of less than 200 mV. This transistor has a collector current of up to 100 mA and a peak collector of less than 200 mA. This RoHS-compliant transistor is available in a through-hole package that measures 17.1 x 4.6 mm.

Product Specifications

Product Details

  • Part Number
    BC546A
  • Manufacturer
    Diotec Semiconductor
  • Description
    65 V NPN Bipolar Junction Transistor for Switching Applications

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    5 V
  • Base Emitter Saturation Voltage
    660 mV
  • Collector Base Voltage
    80 V
  • Collector Cut off Current
    4 µA
  • Collector Emitter Breakdown Voltage
    65 V
  • Collector Emitter Voltage
    65 V
  • Continuous Collector Current
    100 mA
  • Pulse Collector Current
    200 mA
  • Gain Bandwidth Product
    300 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    500 mW
  • Output Capacitance
    3.5 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-92
  • Application
    Signal processing Switching, Amplification Commercial grade
  • Dimension
    17.1 x 4.6 mm

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