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BC847A-Q

Bipolar Junction Transistor by Diotec Semiconductor (226 more products)
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The BC847A-Q from Diotec Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 6 V, Base Emitter Saturation Voltage 700 to 900 mV, Emitter Cut off Current 100 nA, Collector Base Voltage 50 V, Collector Cut off Current 0.1 to 5 µA. Tags: Surface Mount, NPN Transistor. More details for BC847A-Q can be seen below.

Product Specifications

Product Details

  • Part Number
    BC847A-Q
  • Manufacturer
    Diotec Semiconductor
  • Description
    45 V, 100 mA, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    6 V
  • Base Emitter Saturation Voltage
    700 to 900 mV
  • Emitter Cut off Current
    100 nA
  • Collector Base Voltage
    50 V
  • Collector Cut off Current
    0.1 to 5 µA
  • Collector Emitter Voltage
    45 V
  • Continuous Collector Current
    100 mA
  • Pulse Collector Current
    200 mA
  • DC Current Gain
    90 to 220
  • Gain Bandwidth Product
    100 to 300 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    250 mW
  • Output Capacitance
    3.5 to 6 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Application
    Signal processing Switching, Amplification Commercial grade

Technical Documents
View details on the manufacturer's website
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