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DI2579N

Bipolar Junction Transistor by Diotec Semiconductor (185 more products)
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DI2579N Image

The DI2579N from Diotec Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 9 V, Base Emitter Saturation Voltage 1 V, Collector Base Voltage 9 V, Collector Emitter Voltage 400 V, Continuous Collector Current 1 A. Tags: Surface Mount, NPN Transistor. More details for DI2579N can be seen below.

Product Specifications

Product Details

  • Part Number
    DI2579N
  • Manufacturer
    Diotec Semiconductor
  • Description
    400 V, 1 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    9 V
  • Base Emitter Saturation Voltage
    1 V
  • Collector Base Voltage
    9 V
  • Collector Emitter Voltage
    400 V
  • Continuous Collector Current
    1 A
  • Pulse Collector Current
    2 A
  • DC Current Gain
    4 to 30
  • Industry
    Industrial, Commercial
  • Power Dissipation
    1.25 W
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-223
  • Application
    Signal processing Switching, Amplification Commercial grade

Technical Documents
View details on the manufacturer's website
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