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MMBT5551

Bipolar Junction Transistor by Diotec Semiconductor (185 more products)
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MMBT5551 Image

The MMBT5551 from Diotec Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 6 V, Base Emitter Saturation Voltage 1 V, Emitter Cut off Current 50 nA, Collector Base Voltage 180 V, Collector Cut off Current 0.05 to 50 µA. Tags: Surface Mount, NPN Transistor. More details for MMBT5551 can be seen below.

Product Specifications

Product Details

  • Part Number
    MMBT5551
  • Manufacturer
    Diotec Semiconductor
  • Description
    160 V, 600 mA, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor
  • Polarity
    NPN
  • Emitter Base Voltage
    6 V
  • Base Emitter Saturation Voltage
    1 V
  • Emitter Cut off Current
    50 nA
  • Collector Base Voltage
    180 V
  • Collector Cut off Current
    0.05 to 50 µA
  • Collector Emitter Voltage
    160 V
  • Continuous Collector Current
    600 mA
  • DC Current Gain
    30 to 250
  • Gain Bandwidth Product
    100 to 300 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    250 mW
  • Output Capacitance
    6 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Application
    Signal processing Switching, Amplification Commercial grade

Technical Documents
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