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The 2SD1898D from Galaxy Century Microelectronics is a Bipolar Junction Transistor with Emitter Base Voltage 5 V, Emitter Cut off Current 1 µA, Collector Base Voltage 120 V, Collector Cut off Current 1 µA, Collector Emitter Breakdown Voltage 80 V. Tags: Surface Mount, NPN Transistor. More details for 2SD1898D can be seen below.

Product Specifications

Product Details

  • Part Number
    2SD1898D
  • Manufacturer
    Galaxy Century Microelectronics
  • Description
    120 V, 1 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor View all
  • Polarity
    NPN
  • Emitter Base Voltage
    5 V
  • Emitter Cut off Current
    1 µA
  • Collector Base Voltage
    120 V
  • Collector Cut off Current
    1 µA
  • Collector Emitter Breakdown Voltage
    80 V
  • Collector Emitter Voltage
    80 V
  • Continuous Collector Current
    1 A
  • Pulse Collector Current
    20000 mA
  • DC Current Gain
    82 to 390
  • Gain Bandwidth Product
    100 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    1.3 W
  • Output Capacitance
    20 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
  • Package Type
    Surface Mount View all
  • Package
    TO-252
  • Application
    NPN silicon transistor

Technical Documents

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