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BC817DS

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The BC817DS from Galaxy Century Microelectronics is a Bipolar Junction Transistor with Emitter Base Voltage 5 V, Emitter Cut off Current 100 nA, Collector Base Voltage 50 V, Collector Cut off Current 5 µA, Collector Emitter Breakdown Voltage 45 V. Tags: Surface Mount, NPN Transistor. More details for BC817DS can be seen below.

Product Specifications

Product Details

  • Part Number
    BC817DS
  • Manufacturer
    Galaxy Century Microelectronics
  • Description
    50 V, 0.5 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor View all
  • Polarity
    NPN
  • Emitter Base Voltage
    5 V
  • Emitter Cut off Current
    100 nA
  • Collector Base Voltage
    50 V
  • Collector Cut off Current
    5 µA
  • Collector Emitter Breakdown Voltage
    45 V
  • Collector Emitter Voltage
    45 V
  • Continuous Collector Current
    0.5 A
  • Pulse Collector Current
    1000 mA
  • DC Current Gain
    40 to 400
  • Gain Bandwidth Product
    100 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    0.2 W
  • Output Capacitance
    5 pF
  • Operating Temperature
    -65 to 150 Degree C
  • RoHS Compliant
    Yes View all
  • Package Type
    Surface Mount View all
  • Package
    SOT-363
  • Application
    General purpose switching and amplification, Puse-pull amplifiers, Multi-phase stepper motor drivers

Technical Documents
View details on the manufacturer's website

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