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The BCW65C from Galaxy Century Microelectronics is a Bipolar Junction Transistor with Emitter Base Voltage 5 V, Base Emitter Saturation Voltage 1.25 to 2 V, Emitter Cut off Current 20 nA, Collector Base Voltage 60 V, Collector Cut off Current 20 nA. Tags: Surface Mount, NPN Transistor. More details for BCW65C can be seen below.

Product Specifications

Product Details

  • Part Number
    BCW65C
  • Manufacturer
    Galaxy Century Microelectronics
  • Description
    60 V, 0.8 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor View all
  • Polarity
    NPN
  • Emitter Base Voltage
    5 V
  • Base Emitter Saturation Voltage
    1.25 to 2 V
  • Emitter Cut off Current
    20 nA
  • Collector Base Voltage
    60 V
  • Collector Cut off Current
    20 nA
  • Collector Emitter Breakdown Voltage
    60 V
  • Collector Emitter Voltage
    32 V
  • Continuous Collector Current
    0.8 A
  • Pulse Collector Current
    1000 mA
  • DC Current Gain
    80 to 630
  • Gain Bandwidth Product
    170 MHz
  • Industry
    Military, Industrial, Commercial
  • Power Dissipation
    0.33 W
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
  • Package Type
    Surface Mount View all
  • Package
    SOT-23

Technical Documents

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