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BL2515DW

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The BL2515DW from Galaxy Century Microelectronics is a Bipolar Junction Transistor with Emitter Base Voltage 6 V, Base Emitter Saturation Voltage 1.1 V, Emitter Cut off Current 100 nA, Collector Base Voltage 20 V, Collector Cut off Current 100 nA. Tags: Surface Mount, NPN Transistor. More details for BL2515DW can be seen below.

Product Specifications

Product Details

  • Part Number
    BL2515DW
  • Manufacturer
    Galaxy Century Microelectronics
  • Description
    20 V, 0.8 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor View all
  • Polarity
    NPN
  • Emitter Base Voltage
    6 V
  • Base Emitter Saturation Voltage
    1.1 V
  • Emitter Cut off Current
    100 nA
  • Collector Base Voltage
    20 V
  • Collector Cut off Current
    100 nA
  • Collector Emitter Breakdown Voltage
    15 V
  • Collector Emitter Voltage
    15 V
  • Continuous Collector Current
    0.8 A
  • Pulse Collector Current
    1500 mA
  • DC Current Gain
    150 to 560
  • Gain Bandwidth Product
    300 MHz
  • Industry
    Military, Industrial, Commercial
  • Power Dissipation
    0.2 W
  • Output Capacitance
    6.5 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes View all
  • Package Type
    Surface Mount View all
  • Package
    SOT-363

Technical Documents
View details on the manufacturer's website

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