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MJB44H11

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The MJB44H11 from Galaxy Century Microelectronics is a Bipolar Junction Transistor with Emitter Base Voltage 5 V, Base Emitter Saturation Voltage 1.5 V, Emitter Cut off Current 50 µA, Collector Cut off Current 10 µA, Collector Emitter Breakdown Voltage 80 V. Tags: Surface Mount, NPN Transistor. More details for MJB44H11 can be seen below.

Product Specifications

Product Details

  • Part Number
    MJB44H11
  • Manufacturer
    Galaxy Century Microelectronics
  • Description
    80 V, 10 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor View all
  • Polarity
    NPN
  • Emitter Base Voltage
    5 V
  • Base Emitter Saturation Voltage
    1.5 V
  • Emitter Cut off Current
    50 µA
  • Collector Cut off Current
    10 µA
  • Collector Emitter Breakdown Voltage
    80 V
  • Collector Emitter Voltage
    80 V
  • Continuous Collector Current
    10 A
  • Pulse Collector Current
    20 A
  • DC Current Gain
    40 to 60
  • Gain Bandwidth Product
    50 MHz
  • Industry
    Military, Industrial, Commercial
  • Power Dissipation
    50 W
  • Output Capacitance
    65 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes View all
  • Package Type
    Surface Mount View all
  • Package
    TO-263

Technical Documents
View details on the manufacturer's website

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