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MMST5551

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The MMST5551 from Galaxy Century Microelectronics is a Bipolar Junction Transistor with Emitter Base Voltage 6 V, Base Emitter Saturation Voltage 1 V, Emitter Cut off Current 50 nA, Collector Base Voltage 180 V, Collector Cut off Current 50 nA. Tags: Surface Mount, NPN Transistor. More details for MMST5551 can be seen below.

Product Specifications

Product Details

  • Part Number
    MMST5551
  • Manufacturer
    Galaxy Century Microelectronics
  • Description
    160 V, 0.6 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor View all
  • Polarity
    NPN
  • Emitter Base Voltage
    6 V
  • Base Emitter Saturation Voltage
    1 V
  • Emitter Cut off Current
    50 nA
  • Collector Base Voltage
    180 V
  • Collector Cut off Current
    50 nA
  • Collector Emitter Breakdown Voltage
    160 V
  • Collector Emitter Voltage
    160 V
  • Continuous Collector Current
    0.6 A
  • Pulse Collector Current
    0.8 A
  • DC Current Gain
    30 to 250
  • Gain Bandwidth Product
    80 MHz
  • Industry
    Military, Industrial, Commercial
  • Power Dissipation
    0.2 W
  • Output Capacitance
    6 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes View all
  • Package Type
    Surface Mount View all
  • Package
    SOT-323

Technical Documents
View details on the manufacturer's website

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