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KTD718

Bipolar Junction Transistor by KEC Semiconductor
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KTD718 Image

The KTD718 from KEC Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 5 V, Emitter Cut off Current 10 µA, Collector Base Voltage 120 V, Collector Cut off Current 10 µA, Collector Emitter Breakdown Voltage 120 V. Tags: Through Hole, NPN Transistor. More details for KTD718 can be seen below.

Product Specifications

Product Details

  • Part Number
    KTD718
  • Manufacturer
    KEC Semiconductor
  • Description
    120 V, 10 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor View all
  • Polarity
    NPN
  • Emitter Base Voltage
    5 V
  • Emitter Cut off Current
    10 µA
  • Collector Base Voltage
    120 V
  • Collector Cut off Current
    10 µA
  • Collector Emitter Breakdown Voltage
    120 V
  • Collector Emitter Voltage
    120 V
  • Continuous Collector Current
    10 A
  • DC Current Gain
    55 to 160
  • Gain Bandwidth Product
    12 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    80 W
  • Output Capacitance
    170 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes View all
  • Package Type
    Through Hole View all
  • Package
    TO-3P(N)
  • Application
    High Power Amplifier Application

Technical Documents
View details on the manufacturer's website

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