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MJE13003-R

Bipolar Junction Transistor by KEC Semiconductor
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MJE13003-R Image

The MJE13003-R from KEC Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 9 V, Base Emitter Saturation Voltage 1 to 1.2 V, Emitter Cut off Current 10 µA, Collector Base Voltage 700 V, Collector Cut off Current 10 µA. Tags: Through Hole, NPN Transistor. More details for MJE13003-R can be seen below.

Product Specifications

Product Details

  • Part Number
    MJE13003-R
  • Manufacturer
    KEC Semiconductor
  • Description
    400 V, 1.5 A, NPN General Purpose Bipolar Transistor

General

  • Type
    NPN Transistor View all
  • Polarity
    NPN
  • Emitter Base Voltage
    9 V
  • Base Emitter Saturation Voltage
    1 to 1.2 V
  • Emitter Cut off Current
    10 µA
  • Collector Base Voltage
    700 V
  • Collector Cut off Current
    10 µA
  • Collector Emitter Voltage
    400 V
  • Continuous Collector Current
    1.5 A
  • Pulse Collector Current
    3 A
  • DC Current Gain
    9 to 15
  • Gain Bandwidth Product
    4 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    1.5 to 20 W
  • Output Capacitance
    21 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes View all
  • Package Type
    Through Hole View all
  • Package
    TO-126
  • Application
    Switching Regulator, High Voltage and High Speed Switching Applications

Technical Documents
View details on the manufacturer's website

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