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HSD1609S

Bipolar Junction Transistor by Lision Technology
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The HSD1609S from Lision Technology is a Bipolar Junction Transistor with Emitter Base Voltage 5 V, Collector Base Voltage 160 V, Collector Emitter Breakdown Voltage 160 V, Collector Emitter Voltage 160 V, Continuous Collector Current 100 mA. Tags: Through Hole, NPN Transistor. More details for HSD1609S can be seen below.

Product Specifications

Product Details

  • Part Number
    HSD1609S
  • Manufacturer
    Lision Technology
  • Description
    160 V, 100 mA, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor View all
  • Polarity
    NPN
  • Emitter Base Voltage
    5 V
  • Collector Base Voltage
    160 V
  • Collector Emitter Breakdown Voltage
    160 V
  • Collector Emitter Voltage
    160 V
  • Continuous Collector Current
    100 mA
  • DC Current Gain
    60 to 320
  • Gain Bandwidth Product
    140 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    625 mW
  • RoHS Compliant
    Yes View all
  • Package Type
    Through Hole View all
  • Package
    TO-92
View details on the manufacturer's website

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