2SB633C

Bipolar Junction Transistor by MOSPEC SEMICONDUCTOR (708 more products)

Note : Your request will be directed to MOSPEC SEMICONDUCTOR.

The 2SB633C from MOSPEC SEMICONDUCTOR is a Bipolar Junction Transistor with Emitter Base Voltage 6 V, Emitter Cut off Current 100 µA, Collector Base Voltage 100 V, Collector Cut off Current 100 µA, Collector Emitter Breakdown Voltage 85 V. Tags: Through Hole, PNP Transistor. More details for 2SB633C can be seen below.

Product Specifications

Product Details

  • Part Number
    2SB633C
  • Manufacturer
    MOSPEC SEMICONDUCTOR
  • Description
    100 V, 6 A, PNP Bipolar Junction Transistor

General

  • Type
    PNP Transistor
  • Polarity
    PNP
  • Emitter Base Voltage
    6 V
  • Emitter Cut off Current
    100 µA
  • Collector Base Voltage
    100 V
  • Collector Cut off Current
    100 µA
  • Collector Emitter Breakdown Voltage
    85 V
  • Collector Emitter Voltage
    85 V
  • Continuous Collector Current
    6 A
  • Pulse Collector Current
    10 A
  • Gain Bandwidth Product
    5 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    40 W
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Application
    General Purpose amplifier, Low frequency switching application

Technical Documents