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2SD635

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The 2SD635 from Mospec Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 5 V, Base Emitter Saturation Voltage 2.5 V, Emitter Cut off Current 3 mA, Collector Base Voltage 60 V, Collector Cut off Current 100 µA. Tags: Through Hole, NPN Transistor. More details for 2SD635 can be seen below.

Product Specifications

Product Details

  • Part Number
    2SD635
  • Manufacturer
    Mospec Semiconductor
  • Description
    60 V, 7 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor View all
  • Polarity
    NPN
  • Emitter Base Voltage
    5 V
  • Base Emitter Saturation Voltage
    2.5 V
  • Emitter Cut off Current
    3 mA
  • Collector Base Voltage
    60 V
  • Collector Cut off Current
    100 µA
  • Collector Emitter Breakdown Voltage
    60 V
  • Collector Emitter Voltage
    60 V
  • Continuous Collector Current
    7 A
  • Pulse Collector Current
    10 A
  • Industry
    Industrial, Commercial
  • Power Dissipation
    40 W
  • Operating Temperature
    -65 to 150 Degree C
  • RoHS Compliant
    Yes View all
  • Package Type
    Through Hole View all
  • Package
    TO-220
  • Application
    General Purpose amplifier, Low frequency switching application

Technical Documents
View details on the manufacturer's website

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