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MJE13007

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MJE13007 Image

The MJE13007 from Mospec Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 9 V, Base Emitter Saturation Voltage 1.2 to 1.6 V, Emitter Cut off Current 1 mA, Collector Base Voltage 700 V, Collector Cut off Current 5 mA. Tags: Through Hole, NPN Transistor. More details for MJE13007 can be seen below.

Product Specifications

Product Details

  • Part Number
    MJE13007
  • Manufacturer
    Mospec Semiconductor
  • Description
    700 V, 8 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor View all
  • Polarity
    NPN
  • Emitter Base Voltage
    9 V
  • Base Emitter Saturation Voltage
    1.2 to 1.6 V
  • Emitter Cut off Current
    1 mA
  • Collector Base Voltage
    700 V
  • Collector Cut off Current
    5 mA
  • Collector Emitter Voltage
    400 V
  • Continuous Collector Current
    8 A
  • Pulse Collector Current
    16 A
  • Gain Bandwidth Product
    4 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    80 W
  • Output Capacitance
    110 pF
  • Operating Temperature
    -65 to 150 Degree C
  • RoHS Compliant
    Yes View all
  • Package Type
    Through Hole View all
  • Package
    TO-220
  • Application
    High Voltage, High Speed Power Switching Inductive Load Application

Technical Documents
View details on the manufacturer's website

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