TIP35E

Note : Your request will be directed to Mospec Semiconductor.

TIP35E Image

The TIP35E from Mospec Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 5 V, Emitter Cut off Current 1 mA, Collector Base Voltage 180 V, Collector Cut off Current 0.7 mA, Collector Emitter Breakdown Voltage 140 V. Tags: Through Hole, NPN Transistor. More details for TIP35E can be seen below.

Product Specifications

Product Details

  • Part Number
    TIP35E
  • Manufacturer
    Mospec Semiconductor
  • Description
    180 V, 25 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor View all
  • Polarity
    NPN
  • Emitter Base Voltage
    5 V
  • Emitter Cut off Current
    1 mA
  • Collector Base Voltage
    180 V
  • Collector Cut off Current
    0.7 mA
  • Collector Emitter Breakdown Voltage
    140 V
  • Collector Emitter Voltage
    140 V
  • Continuous Collector Current
    25 A
  • Pulse Collector Current
    40 A
  • DC Current Gain
    8 to 25
  • Gain Bandwidth Product
    3 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    125 W
  • Operating Temperature
    -65 to 150 Degree C
  • RoHS Compliant
  • Package Type
    Through Hole View all
  • Package
    TO-247(3P)
  • Application
    General Purpose amplifier, Low frequency switching application

Technical Documents

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