The 2N2369-1 from New Jersey Semiconductor is an NPN Silicon Power Transistor that is ideal for industrial and commercial applications. It has an emitter-base voltage of up to 4.5 V, a collector-emitter voltage of 40 V, and a collector-base voltage of less than 40 V. This transistor has a collector current of up to 200 mA and a power dissipation of 0.36 W. It is available in a through-hole package.
