2N2657

Note : Your request will be directed to New Jersey Semiconductor.

2N2657 Image

The 2N2657 from New Jersey Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 8 V, Base Emitter Saturation Voltage 2 V, Collector Base Voltage 80 V, Collector Emitter Breakdown Voltage 60 V, Collector Emitter Voltage 60 V. Tags: Through Hole, NPN Transistor. More details for 2N2657 can be seen below.

Product Specifications

Product Details

  • Part Number
    2N2657
  • Manufacturer
    New Jersey Semiconductor
  • Description
    60 V, 5 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor View all
  • Polarity
    NPN
  • Emitter Base Voltage
    8 V
  • Base Emitter Saturation Voltage
    2 V
  • Collector Base Voltage
    80 V
  • Collector Emitter Breakdown Voltage
    60 V
  • Collector Emitter Voltage
    60 V
  • Continuous Collector Current
    5 A
  • DC Current Gain
    40 to 120
  • Industry
    Industrial, Commercial
  • Power Dissipation
    7 W
  • RoHS Compliant
  • Package Type
    Through Hole View all
  • Package
    TO-5
  • Application
    General Purpose

Technical Documents

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