The 2N2657 from New Jersey Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 8 V, Base Emitter Saturation Voltage 2 V, Collector Base Voltage 80 V, Collector Emitter Breakdown Voltage 60 V, Collector Emitter Voltage 60 V. Tags: Through Hole, NPN Transistor. More details for 2N2657 can be seen below.