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2N3119

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The 2N3119 from New Jersey Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 4 V, Base Emitter Saturation Voltage 1.1 V, Emitter Cut off Current 100 nA, Collector Base Voltage 100 V, Collector Cut off Current 50 µA. Tags: Through Hole, NPN Transistor. More details for 2N3119 can be seen below.

Product Specifications

Product Details

  • Part Number
    2N3119
  • Manufacturer
    New Jersey Semiconductor
  • Description
    80 V, 0.5 A, Silicon NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor View all
  • Polarity
    NPN
  • Emitter Base Voltage
    4 V
  • Base Emitter Saturation Voltage
    1.1 V
  • Emitter Cut off Current
    100 nA
  • Collector Base Voltage
    100 V
  • Collector Cut off Current
    50 µA
  • Collector Emitter Breakdown Voltage
    80 V
  • Collector Emitter Voltage
    80 V
  • Continuous Collector Current
    0.5 A
  • DC Current Gain
    20 to 200
  • Gain Bandwidth Product
    250 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    4 W
  • Output Capacitance
    6 pF
  • Operating Temperature
    -65 to 200 Degree C
  • RoHS Compliant
    Yes View all
  • Package Type
    Through Hole View all
  • Package
    TO-39
  • Application
    General Purpose, High voltage switching applications

Technical Documents
View details on the manufacturer's website

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