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2N3308

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2N3308 Image

The 2N3308 from New Jersey Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 3 V, Base Emitter Saturation Voltage 1 V, Collector Base Voltage 30 V, Collector Cut off Current 0.01 to 3 µA, Collector Emitter Breakdown Voltage 30 V. Tags: Through Hole, NPN Transistor. More details for 2N3308 can be seen below.

Product Specifications

Product Details

  • Part Number
    2N3308
  • Manufacturer
    New Jersey Semiconductor
  • Description
    25 V, 0.05 A, Silicon NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor View all
  • Polarity
    NPN
  • Emitter Base Voltage
    3 V
  • Base Emitter Saturation Voltage
    1 V
  • Collector Base Voltage
    30 V
  • Collector Cut off Current
    0.01 to 3 µA
  • Collector Emitter Breakdown Voltage
    30 V
  • Collector Emitter Voltage
    25 V
  • Continuous Collector Current
    0.05 A
  • DC Current Gain
    25 to 250
  • Gain Bandwidth Product
    300 to 1200 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    0.3 W
  • Output Capacitance
    1.2 to 1.6 pF
  • Operating Temperature
    -65 to 200 Degree C
  • RoHS Compliant
    Yes View all
  • Package Type
    Through Hole View all
  • Package
    TO-72
  • Application
    General Purpose, High-gain, Low noise amplifier, Oscillator, Mixer and frequency multiplier application

Technical Documents
View details on the manufacturer's website

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