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2N6668

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2N6668 Image

The 2N6668 from New Jersey Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 5 V, Base Emitter Saturation Voltage 4.5 V, Emitter Cut off Current 5 mA, Collector Base Voltage 80 V, Collector Cut off Current 3 mA. Tags: Through Hole, PNP Transistor. More details for 2N6668 can be seen below.

Product Specifications

Product Details

  • Part Number
    2N6668
  • Manufacturer
    New Jersey Semiconductor
  • Description
    80 V, 10 A, PNP Bipolar Junction Transistor

General

  • Type
    PNP Transistor View all
  • Polarity
    PNP
  • Emitter Base Voltage
    5 V
  • Base Emitter Saturation Voltage
    4.5 V
  • Emitter Cut off Current
    5 mA
  • Collector Base Voltage
    80 V
  • Collector Cut off Current
    3 mA
  • Collector Emitter Voltage
    80 V
  • Continuous Collector Current
    10 A
  • Pulse Collector Current
    15 A
  • DC Current Gain
    100 to 20000
  • Industry
    Industrial, Commercial
  • Power Dissipation
    65 W
  • Output Capacitance
    200 pF
  • Operating Temperature
    -65 to 150 Degree C
  • RoHS Compliant
    Yes View all
  • Package Type
    Through Hole View all
  • Package
    TO-220AB
  • Application
    General-purpose Amplifier, Low Frequency switching applications
  • Note
    Darlington Transistor

Technical Documents
View details on the manufacturer's website

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