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2SB1257

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2SB1257 Image

The 2SB1257 from New Jersey Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage -6 V, Base Emitter Saturation Voltage -2 V, Emitter Cut off Current -5 mA, Collector Base Voltage -60 V, Collector Cut off Current -10 µA. Tags: Through Hole, PNP Transistor. More details for 2SB1257 can be seen below.

Product Specifications

Product Details

  • Part Number
    2SB1257
  • Manufacturer
    New Jersey Semiconductor
  • Description
    -60 V, -4 A, PNP Bipolar Junction Transistor

General

  • Type
    PNP Transistor View all
  • Polarity
    PNP
  • Emitter Base Voltage
    -6 V
  • Base Emitter Saturation Voltage
    -2 V
  • Emitter Cut off Current
    -5 mA
  • Collector Base Voltage
    -60 V
  • Collector Cut off Current
    -10 µA
  • Collector Emitter Breakdown Voltage
    -60 V
  • Collector Emitter Voltage
    -60 V
  • Continuous Collector Current
    -4 A
  • Pulse Collector Current
    -6 A
  • DC Current Gain
    2000
  • Gain Bandwidth Product
    150 MHz
  • Industry
    Industrial, Commercial
  • Power Dissipation
    25 W
  • Output Capacitance
    75 pF
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes View all
  • Package Type
    Through Hole View all
  • Package
    TO-220F
  • Application
    Driver for solenoid, Relay and motor and general purpose applications.
  • Note
    Darlington Transistor

Technical Documents
View details on the manufacturer's website

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