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BD679A

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BD679A Image

The BD679A from New Jersey Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 5 V, Emitter Cut off Current 2 mA, Collector Base Voltage 80 V, Collector Cut off Current 2 mA, Collector Emitter Breakdown Voltage 80 V. Tags: Through Hole, NPN Transistor. More details for BD679A can be seen below.

Product Specifications

Product Details

  • Part Number
    BD679A
  • Manufacturer
    New Jersey Semiconductor
  • Description
    80 V, 4 A, NPN Bipolar Junction Transistor

General

  • Type
    NPN Transistor View all
  • Polarity
    NPN
  • Emitter Base Voltage
    5 V
  • Emitter Cut off Current
    2 mA
  • Collector Base Voltage
    80 V
  • Collector Cut off Current
    2 mA
  • Collector Emitter Breakdown Voltage
    80 V
  • Collector Emitter Voltage
    80 V
  • Continuous Collector Current
    4 A
  • DC Current Gain
    750
  • Industry
    Industrial, Commercial
  • Power Dissipation
    40 W
  • Operating Temperature
    -55 to 150 Degree C
  • RoHS Compliant
    Yes View all
  • Package Type
    Through Hole View all
  • Package
    TO-225AA
  • Application
    General-purpose amplifier application
  • Note
    Darlington Transistor

Technical Documents
View details on the manufacturer's website

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