1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. Bipolar Junction Transistors
  5. New Jersey Semiconductor
  6. BDT63

BDT63

Download Datasheet Request Quote

Note : Your request will be directed to New Jersey Semiconductor.

BDT63 Image

The BDT63 from New Jersey Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage 5 V, Emitter Cut off Current 5 mA, Collector Base Voltage 60 V, Collector Cut off Current 2 mA, Collector Emitter Breakdown Voltage 60 V. Tags: Through Hole. More details for BDT63 can be seen below.

Product Specifications

Product Details

  • Part Number
    BDT63
  • Manufacturer
    New Jersey Semiconductor
  • Description
    60 V, 10 A, Silicon NPN Bipolar Junction Transistor

General

  • Polarity
    NPN
  • Emitter Base Voltage
    5 V
  • Emitter Cut off Current
    5 mA
  • Collector Base Voltage
    60 V
  • Collector Cut off Current
    2 mA
  • Collector Emitter Breakdown Voltage
    60 V
  • Collector Emitter Voltage
    60 V
  • Continuous Collector Current
    10 A
  • Pulse Collector Current
    15 A
  • Industry
    Industrial, Commercial
  • Power Dissipation
    90 W
  • Output Capacitance
    100 pF
  • Operating Temperature
    -65 to 150 Degree C
  • RoHS Compliant
    Yes View all
  • Package Type
    Through Hole View all
  • Package
    TO-220C
  • Application
    Audio output stages and general purpose amplifier applications
  • Note
    Darlington Transistor

Technical Documents
View details on the manufacturer's website

Latest Bipolar Junction Transistors

View more products