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BDV64B

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BDV64B Image

The BDV64B from New Jersey Semiconductor is a Bipolar Junction Transistor with Emitter Base Voltage -5 V, Emitter Cut off Current -5 mA, Collector Base Voltage -100 V, Collector Cut off Current -2 to -0.4 mA, Collector Emitter Breakdown Voltage -100 V. Tags: Through Hole. More details for BDV64B can be seen below.

Product Specifications

Product Details

  • Part Number
    BDV64B
  • Manufacturer
    New Jersey Semiconductor
  • Description
    -100 V, -12 A, Silicon PNP Bipolar Junction Transistor

General

  • Polarity
    PNP
  • Emitter Base Voltage
    -5 V
  • Emitter Cut off Current
    -5 mA
  • Collector Base Voltage
    -100 V
  • Collector Cut off Current
    -2 to -0.4 mA
  • Collector Emitter Breakdown Voltage
    -100 V
  • Collector Emitter Voltage
    -100 V
  • Continuous Collector Current
    -12 A
  • Pulse Collector Current
    -15 A
  • DC Current Gain
    1000
  • Industry
    Industrial, Commercial
  • Power Dissipation
    125 W
  • Operating Temperature
    -65 to 150 Degree C
  • RoHS Compliant
    Yes View all
  • Package Type
    Through Hole View all
  • Package
    TO-3PN
  • Application
    Audio output stages and general amplifier and switching applications
  • Note
    Darlington Transistor

Technical Documents
View details on the manufacturer's website

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